| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.4 | |
| -55 to 150 | |
| 50 | |
| 100 | |
| 1 | |
| 15.1@10V | |
| 17@10V | |
| 17 | |
| 3.2 | |
| 5.1 | |
| 134 | |
| 1290@50V | |
| 5.7@50V | |
| 2.4 | |
| 257 | |
| 3200 | |
| 6 | |
| 14 | |
| 20 | |
| 9 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 12.6@10V|14.1@6V | |
| 3.2 | |
| 137 | |
| 50 | |
| 0.8 | |
| 4.1 | |
| 53 | |
| 1 | |
| 2.8 | |
| 2.2 | |
| 20 | |
| 10 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 5.75 mm |
| Longueur du paquet | 4.9 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | VSONP EP |
| 8 |
Create an effective common drain amplifier using this CSD19534Q5AT power MOSFET from Texas Instruments. Its maximum power dissipation is 3200 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device utilizes nexfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.