| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.4 | |
| -55 to 150 | |
| 50 | |
| 100 | |
| 1 | |
| 15.1@10V | |
| 17@10V | |
| 17 | |
| 3.2 | |
| 5.1 | |
| 134 | |
| 1290@50V | |
| 5.7@50V | |
| 2.4 | |
| 257 | |
| 3200 | |
| 6 | |
| 14 | |
| 20 | |
| 9 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 12.6@10V|14.1@6V | |
| 3.2 | |
| 137 | |
| 50 | |
| 0.8 | |
| 4.1 | |
| 53 | |
| 1 | |
| 2.8 | |
| 2.2 | |
| 20 | |
| 10 | |
| Mounting | Surface Mount |
| Package Height | 1 |
| Package Width | 5.75 |
| Package Length | 4.9 |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | VSONP EP |
| 8 |
Create an effective common drain amplifier using this CSD19534Q5AT power MOSFET from Texas Instruments. Its maximum power dissipation is 3200 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device utilizes nexfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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