| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 1.9 | |
| 20 | |
| 100 | |
| 1 | |
| 10.2@10V | |
| 5.3@4.5V|11.5@10V | |
| 11.5 | |
| 1.2 | |
| 768@15V | |
| 2500 | |
| 1 | |
| 5 | |
| 11 | |
| 2 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.5 | |
| Installation | Surface Mount |
| Largeur du paquet | 3.1(Max) |
| Longueur du paquet | 3.25(Max) |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | VSONP EP |
| 8 |
Compared to traditional transistors, CSD17579Q3AT power MOSFETs, developed by Texas Instruments, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device utilizes nexfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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