| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 1.9 | |
| 20 | |
| 100 | |
| 1 | |
| 10.2@10V | |
| 5.3@4.5V|11.5@10V | |
| 11.5 | |
| 1.2 | |
| 768@15V | |
| 2500 | |
| 1 | |
| 5 | |
| 11 | |
| 2 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.5 | |
| Mounting | Surface Mount |
| Package Width | 3.1(Max) |
| Package Length | 3.25(Max) |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | VSONP EP |
| 8 |
Compared to traditional transistors, CSD17579Q3AT power MOSFETs, developed by Texas Instruments, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device utilizes nexfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
AI 기반 의료기기 설계
Arrow의 최신 백서에서 진단 및 치료 솔루션을 더 빠르고 안전하게 개발할 수 있는 시스템 설계 팁, 부품 추천 및 AI 인사이트를 확인하세요.