| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 1.65 | |
| 100 | |
| 100 | |
| 1 | |
| 1.4@10V | |
| 30@4.5V | |
| 6.9 | |
| 5400@15V | |
| 3100 | |
| 12 | |
| 26 | |
| 27 | |
| 14 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.4 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 6 mm |
| Longueur du paquet | 5 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | VSON-CLIP EP |
| 8 | |
| Forme de sonde | No Lead |
This CSD17556Q5BT power MOSFET from Texas Instruments can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 3100 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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