| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 1.65 | |
| 100 | |
| 100 | |
| 1 | |
| 1.4@10V | |
| 30@4.5V | |
| 6.9 | |
| 5400@15V | |
| 3100 | |
| 12 | |
| 26 | |
| 27 | |
| 14 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.4 | |
| Mounting | Surface Mount |
| Package Height | 1 mm |
| Package Width | 6 mm |
| Package Length | 5 mm |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | VSON-CLIP EP |
| 8 | |
| Lead Shape | No Lead |
This CSD17556Q5BT power MOSFET from Texas Instruments can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 3100 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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