| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 48 | |
| 9@10V | |
| 6@4.5V | |
| 1.5 | |
| 1050@15V | |
| 2600 | |
| 3.4 | |
| 24 | |
| 12 | |
| 8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.6 | |
| Installation | Surface Mount |
| Largeur du paquet | 3.1(Max) |
| Longueur du paquet | 3.25(Max) |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | VSONP EP |
| 8 |
Use Texas Instruments' CSD17551Q3A power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 2600 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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