| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 24 | |
| 3.5@10V | |
| 10@4.5V | |
| 2.7 | |
| 1560@15V | |
| 3200 | |
| 6.1 | |
| 11.5 | |
| 15 | |
| 8.3 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.3 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 |
| Largeur du paquet | 5.75 |
| Longueur du paquet | 4.9 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | VSONP EP |
| 8 |
Looking for a component that can both amplify and switch between signals within your circuit? The CSD17505Q5A power MOSFET from Texas Instruments provides the solution. Its maximum power dissipation is 3200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes nexfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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