| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 24 | |
| 3.5@10V | |
| 10@4.5V | |
| 2.7 | |
| 1560@15V | |
| 3200 | |
| 6.1 | |
| 11.5 | |
| 15 | |
| 8.3 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.3 | |
| Mounting | Surface Mount |
| Package Height | 1 |
| Package Width | 5.75 |
| Package Length | 4.9 |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | VSONP EP |
| 8 |
Looking for a component that can both amplify and switch between signals within your circuit? The CSD17505Q5A power MOSFET from Texas Instruments provides the solution. Its maximum power dissipation is 3200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes nexfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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