| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| NexFET | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| 10 | |
| 38 | |
| 1.5@8V | |
| 2.8@4.5V | |
| 6 | |
| 8.4 | |
| 4030@15V | |
| 3200 | |
| 23 | |
| 27 | |
| 35 | |
| 9.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.1 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 6 mm |
| Longueur du paquet | 5 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | VSON-CLIP EP |
| 8 | |
| Forme de sonde | No Lead |
Make an effective common gate amplifier using this CSD17312Q5 power MOSFET from Texas Instruments. Its maximum power dissipation is 3200 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device utilizes nexfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
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