| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| NexFET | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| 10 | |
| 38 | |
| 1.5@8V | |
| 2.8@4.5V | |
| 6 | |
| 8.4 | |
| 4030@15V | |
| 3200 | |
| 23 | |
| 27 | |
| 35 | |
| 9.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.1 | |
| Mounting | Surface Mount |
| Package Height | 1 mm |
| Package Width | 6 mm |
| Package Length | 5 mm |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | VSON-CLIP EP |
| 8 | |
| Lead Shape | No Lead |
Make an effective common gate amplifier using this CSD17312Q5 power MOSFET from Texas Instruments. Its maximum power dissipation is 3200 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device utilizes nexfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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