| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| 10 | |
| 28 | |
| 2.6@8V | |
| 19@4.5V | |
| 4.3 | |
| 5.7 | |
| 2660@15V | |
| 3200 | |
| 10.5 | |
| 16.2 | |
| 28 | |
| 10.7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.1 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 |
| Largeur du paquet | 5.75 |
| Longueur du paquet | 4.9 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | VSONP EP |
| 8 |
Make an effective common source amplifier using this CSD17301Q5A power MOSFET from Texas Instruments. Its maximum power dissipation is 3200 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes nexfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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