| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 25 | |
| 16 | |
| 1.9 | |
| 28 | |
| 100 | |
| 1 | |
| 2.8@10V | |
| 13.3@4.5V | |
| 3.5 | |
| 5.5 | |
| 47 | |
| 2040@12.5V | |
| 1600 | |
| 3100 | |
| 9.2 | |
| 18.3 | |
| 15.2 | |
| 11.8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 2.2@10V|2.9@4.5V | |
| 1.6 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 |
| Largeur du paquet | 5.75 |
| Longueur du paquet | 4.9 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | VSONP EP |
| 8 |
Use Texas Instruments' CSD16403Q5A power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 3100 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device is made with nexfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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