| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 25 | |
| 16 | |
| 1.9 | |
| 28 | |
| 100 | |
| 1 | |
| 2.8@10V | |
| 13.3@4.5V | |
| 3.5 | |
| 5.5 | |
| 47 | |
| 2040@12.5V | |
| 1600 | |
| 3100 | |
| 9.2 | |
| 18.3 | |
| 15.2 | |
| 11.8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 2.2@10V|2.9@4.5V | |
| 1.6 | |
| Mounting | Surface Mount |
| Package Height | 1 |
| Package Width | 5.75 |
| Package Length | 4.9 |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | VSONP EP |
| 8 |
Use Texas Instruments' CSD16403Q5A power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 3100 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device is made with nexfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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