| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Triple Drain Dual Source | |
| NexFET | |
| Enhancement | |
| N | |
| 1 | |
| 12 | |
| ±10 | |
| 1.3 | |
| 3.5 | |
| 100 | |
| 1 | |
| 10.2@4.5V | |
| 8.6@4.5V | |
| 3 | |
| 1050@6V | |
| 1900 | |
| 8 | |
| 11 | |
| 20 | |
| 7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.28(Max) |
| Largeur du paquet | 1 |
| Longueur du paquet | 1.5 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | BGA |
| Conditionnement du fournisseur | DSBGA |
| 6 | |
| Forme de sonde | Ball |
Thanks to Texas Instruments, both your amplification and switching needs can be taken care of with one component: the CSD13306W power MOSFET. Its maximum power dissipation is 1900 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device utilizes nexfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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