| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| N | |
| 1 | |
| 12 | |
| ±8 | |
| 1.1 | |
| 22 | |
| 100 | |
| 1 | |
| 9.3@4.5V | |
| 5.1@4.5V | |
| 0.76 | |
| 767@6V | |
| 2700 | |
| 13.6 | |
| 28 | |
| 11 | |
| 4.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.8 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.75(Max) |
| Largeur du paquet | 2.1(Max) |
| Longueur du paquet | 2.1(Max) |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | WSON EP |
| 6 | |
| Forme de sonde | No Lead |
Increase the current or voltage in your circuit with this CSD13202Q2 power MOSFET from Texas Instruments. Its maximum power dissipation is 2700 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes nexfet technology.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.