STMicroelectronicsBUL216GP BJT
Trans GP BJT NPN 800V 4A 9000mW 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 1600 | |
| 800 | |
| 9 | |
| 1.2@1.2A@1A|1.2@0.66A@2A | |
| 1@1.2A@1A|3@0.66A@2A | |
| 4 | |
| 12@400mA@5V|10@10mA@5V | |
| 9000 | |
| -65 | |
| 150 | |
| Tube | |
| Industrial | |
| Installation | Through Hole |
| Hauteur du paquet | 9.15(Max) |
| Largeur du paquet | 4.6(Max) |
| Longueur du paquet | 10.4(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN BUL216 GP BJT from STMicroelectronics. This bipolar junction transistor's maximum emitter base voltage is 9 V. Its maximum power dissipation is 9000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 800 V and a maximum emitter base voltage of 9 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
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