Infineon Technologies AGBSZ12DN20NS3GATMA1MOSFET
Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 11.3 | |
| 100 | |
| 1 | |
| 125@10V | |
| 6.5@10V | |
| 6.5 | |
| 1.1 | |
| 2.3 | |
| 212 | |
| 1.8 | |
| 510@100V | |
| 5.1@100V | |
| 2 | |
| 39 | |
| 50000 | |
| 3 | |
| 4 | |
| 10 | |
| 6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 108@10V | |
| 45 | |
| 60 | |
| 1 | |
| 4.5 | |
| 74 | |
| 1.2 | |
| 3 | |
| 20 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 3.3 mm |
| Longueur du paquet | 3.3 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TSDSON EP |
| 8 | |
| Forme de sonde | No Lead |
If you need to either amplify or switch between signals in your design, then Infineon Technologies' BSZ12DN20NS3GATMA1 power MOSFET is for you. Its maximum power dissipation is 50000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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