Infineon Technologies AGBSZ12DN20NS3GATMA1MOSFETs
Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 11.3 | |
| 100 | |
| 1 | |
| 125@10V | |
| 6.5@10V | |
| 6.5 | |
| 1.1 | |
| 2.3 | |
| 212 | |
| 1.8 | |
| 510@100V | |
| 5.1@100V | |
| 2 | |
| 39 | |
| 50000 | |
| 3 | |
| 4 | |
| 10 | |
| 6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 108@10V | |
| 45 | |
| 60 | |
| 1 | |
| 4.5 | |
| 74 | |
| 1.2 | |
| 3 | |
| 20 | |
| Mounting | Surface Mount |
| Package Height | 1 mm |
| Package Width | 3.3 mm |
| Package Length | 3.3 mm |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | TSDSON EP |
| 8 | |
| Lead Shape | No Lead |
If you need to either amplify or switch between signals in your design, then Infineon Technologies' BSZ12DN20NS3GATMA1 power MOSFET is for you. Its maximum power dissipation is 50000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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