Infineon Technologies AGBSZ086P03NS3GATMA1MOSFET
Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±25 | |
| 13.5 | |
| 8.6@10V | |
| 43.2@10V | |
| 43.2 | |
| 3190@15V | |
| 69000 | |
| 8 | |
| 46 | |
| 35 | |
| 16 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 3.3 mm |
| Longueur du paquet | 3.3 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TSDSON EP |
| 8 | |
| Forme de sonde | No Lead |
If you need to either amplify or switch between signals in your design, then Infineon Technologies' BSZ086P03NS3GATMA1 power MOSFET is for you. Its maximum power dissipation is 69000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology.
| EDA / CAD Models |
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