Infineon Technologies AGBSZ068N06NSATMA1MOSFET
Trans MOSFET N-CH 60V 13A 8-Pin TSDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| BSZ068N06NSATMA1 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 3.3 | |
| -55 to 150 | |
| 13 | |
| 100 | |
| 1 | |
| 6.8@10V | |
| 17@10V | |
| 17 | |
| 3.4 | |
| 5.6 | |
| 52 | |
| 5.6 | |
| 1200@30V | |
| 19@30V | |
| 2.1 | |
| 300 | |
| 2100 | |
| 3 | |
| 3 | |
| 12 | |
| 7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 5.6@10V|8.2@6V | |
| 252 | |
| 0.88 | |
| 4.6 | |
| 23 | |
| 1 | |
| 2.8 | |
| 1.8 | |
| 20 | |
| 13 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 |
| Largeur du paquet | 3.3 |
| Longueur du paquet | 3.3 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TSDSON EP |
| 8 | |
| Forme de sonde | No Lead |
As an alternative to traditional transistors, the BSZ068N06NSATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2100 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.
| EDA / CAD Models |
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