Infineon Technologies AGBSP129H6327XTSA1MOSFET
Trans MOSFET N-CH 240V 0.35A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Single Dual Drain | |
| SIPMOS | |
| Depletion | |
| N | |
| 1 | |
| 240 | |
| ±20 | |
| 1 | |
| -55 to 150 | |
| 0.35 | |
| 10 | |
| 50000(Min) | |
| 6000@10V | |
| 3.8@5V | |
| 1.7 | |
| 0.24 | |
| 65 | |
| 82@25V | |
| 6@25V | |
| 2.1 | |
| 12 | |
| 1800 | |
| 35 | |
| 4.1 | |
| 22 | |
| 4.4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 4200@10V|6500@0V | |
| 1.4 | |
| 115 | |
| 0.79 | |
| 0.37 | |
| 53 | |
| 1.2 | |
| 1.4 | |
| 20 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.6 mm |
| Largeur du paquet | 3.5 mm |
| Longueur du paquet | 6.5 mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-223 |
| 4 | |
| Forme de sonde | Gull-wing |
Create an effective common drain amplifier using this BSP129H6327XTSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 1800 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes sipmos technology. This N channel MOSFET transistor operates in depletion mode.
| EDA / CAD Models |
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