Infineon Technologies AGBSO130P03SHXUMA1MOSFET
Trans MOSFET P-CH 30V 9.2A 8-Pin DSO T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±25 | |
| 9.2 | |
| 13@10V | |
| 61@10V | |
| 61 | |
| 2650@25V | |
| 2360 | |
| 62 | |
| 16 | |
| 70 | |
| 13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 9.9@10V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.65(Max) mm |
| Largeur du paquet | 4(Max) mm |
| Longueur du paquet | 5(Max) mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | DSO |
| 8 | |
| Forme de sonde | Gull-wing |
Make an effective common gate amplifier using this BSO130P03SHXUMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 1560 mW. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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