Infineon Technologies AGBSO130P03SHXUMA1MOSFETs
Trans MOSFET P-CH 30V 9.2A 8-Pin DSO T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±25 | |
| 9.2 | |
| 13@10V | |
| 61@10V | |
| 61 | |
| 2650@25V | |
| 2360 | |
| 62 | |
| 16 | |
| 70 | |
| 13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 9.9@10V | |
| Mounting | Surface Mount |
| Package Height | 1.65(Max) mm |
| Package Width | 4(Max) mm |
| Package Length | 5(Max) mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | DSO |
| 8 | |
| Lead Shape | Gull-wing |
Make an effective common gate amplifier using this BSO130P03SHXUMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 1560 mW. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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