Infineon Technologies AGBSL211SPH6327XTSA1MOSFET
Trans MOSFET P-CH 20V 4.7A 6-Pin TSOP T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±12 | |
| 1.2 | |
| 4.7 | |
| 100 | |
| 1 | |
| 67@4.5V | |
| 8.3@4.5V | |
| 654@15V | |
| 2000 | |
| 23.3 | |
| 13.9 | |
| 25 | |
| 8.7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) mm |
| Largeur du paquet | 1.6 mm |
| Longueur du paquet | 2.9 mm |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | TSOP |
| 6 | |
| Forme de sonde | Gull-wing |
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the BSL211SPH6327XTSA1 power MOSFET. Its maximum power dissipation is 2000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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