Infineon Technologies AGBSL207NH6327XTSA1MOSFET
Trans MOSFET N-CH 20V 2.1A 6-Pin TSOP T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Dual | |
| Enhancement | |
| N | |
| 2 | |
| 20 | |
| ±12 | |
| 2.1 | |
| 70@4.5V | |
| 2.1@4.5V | |
| 315@10V | |
| 500 | |
| 2.4 | |
| 2.8 | |
| 11 | |
| 5.4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 58@4.5V|81@2.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) mm |
| Largeur du paquet | 1.6 mm |
| Longueur du paquet | 2.9 mm |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | TSOP |
| 6 |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the BSL207NH6327XTSA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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