Infineon Technologies AGBSG0811NDATMA1MOSFET
Trans MOSFET N-CH 25V 31A/50A 8-Pin TISON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| N | |
| 2 | |
| 25 | |
| ±16 | |
| 2 | |
| -55 to 150 | |
| 31@Q1|50@Q2 | |
| 100 | |
| 1 | |
| 3@10V@Q1|0.8@10V@Q2 | |
| 5.6@4.5V@Q1|20@4.5V@Q2 | |
| 1.4@Q 1|4.7@Q 2 | |
| 2@Q 1|6.4@Q 2 | |
| 10@Q 1|20@Q 2 | |
| 780@12V@Q1|2700@12V@Q2 | |
| 38@12V@Q 1|130@12V@Q 2 | |
| 1.2 | |
| 390@Q1|1400@Q2 | |
| 6250 | |
| 1.4@Q 1|2.6@Q 2 | |
| 4.7@Q 1|4.3@Q 2 | |
| 4.3@Q 1|8.8@Q 2 | |
| 4.3@Q 1|5.6@Q 2 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 3.2@4.5V|2.4@10V@Q1|0.9@4.5V|0.7@10V@Q2 | |
| 6.25 | |
| 160 | |
| 50 | |
| 0.84@Q 1|0.77@Q 2 | |
| 2.6@Q 1|2.3@Q 2 | |
| 1 | |
| 1.6 | |
| 1.2 | |
| 16 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.1(Max) |
| Largeur du paquet | 6.1(Max) |
| Longueur du paquet | 5.1(Max) |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TISON EP |
| 8 | |
| Forme de sonde | No Lead |
This BSG0811NDATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 6250 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with optimos 5 technology.
| EDA / CAD Models |
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