Infineon Technologies AGBSC22DN20NS3GATMA1MOSFET
Trans MOSFET N-CH 200V 7A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 4 | |
| 7 | |
| 225@10V | |
| 4.2@10V | |
| 4.2 | |
| 320@100V | |
| 34000 | |
| 3 | |
| 4 | |
| 6 | |
| 4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 194@10V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 5.9 mm |
| Longueur du paquet | 5.15 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TDSON EP |
| 8 | |
| Forme de sonde | No Lead |
Looking for a component that can both amplify and switch between signals within your circuit? The BSC22DN20NS3GATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 34000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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