Infineon Technologies AGBSC031N06NS3GATMA1MOSFET
Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| 100 | |
| 3.1@10V | |
| 98@10V | |
| 98 | |
| 8000@30V | |
| 2500 | |
| 16 | |
| 161 | |
| 63 | |
| 38 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 400 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 5.9 mm |
| Longueur du paquet | 5.15 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TDSON EP |
| 8 | |
| Forme de sonde | No Lead |
Make an effective common gate amplifier using this BSC031N06NS3GATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2500 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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