Infineon Technologies AGBSC018NE2LSIATMA1MOSFET
Trans MOSFET N-CH 25V 29A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 25 | |
| ±20 | |
| 2 | |
| 29 | |
| 100 | |
| 500 | |
| 1.8@10V | |
| 17@4.5V|36@10V | |
| 36 | |
| 2500@12V | |
| 2500 | |
| 3.6 | |
| 4.8 | |
| 24 | |
| 5.2 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.5@10V|1.9@4.5V | |
| 400 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 5.9 mm |
| Longueur du paquet | 5.15 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TDSON EP |
| 8 | |
| Forme de sonde | No Lead |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies' BSC018NE2LSIATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology.
| EDA / CAD Models |
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