Infineon Technologies AGBSC009NE2LSATMA1MOSFET
Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 25 | |
| ±20 | |
| 2.2 | |
| 41 | |
| 100 | |
| 10 | |
| 0.9@10V | |
| 72@4.5V|126@10V | |
| 126 | |
| 5800@12V | |
| 2500 | |
| 19 | |
| 33 | |
| 48 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.75@10V|1@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 |
| Largeur du paquet | 5.9 |
| Longueur du paquet | 5.15 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TDSON EP |
| 8 | |
| Forme de sonde | No Lead |
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the BSC009NE2LSATMA1 power MOSFET. Its maximum power dissipation is 2500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.
| EDA / CAD Models |
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