NXP SemiconductorsBF1108,215RF MOSFET
Trans RF FET N-CH 3V 0.01A 4-Pin SOT-143B T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.21.00.75 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Si | |
| Single | |
| Depletion | |
| N | |
| 1 | |
| 3 | |
| 7 | |
| 0.01 | |
| 100 | |
| 10 | |
| 20000@0V | |
| 1 | |
| 1 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) mm |
| Largeur du paquet | 1.4(Max) mm |
| Longueur du paquet | 3(Max) mm |
| Carte électronique changée | 4 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-143B |
| 4 | |
| Forme de sonde | Gull-wing |
This BF1108,215 RF amplifier from NXP Semiconductors works in radio frequency environments and can be used to amplify and switch between electronic signals. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel RF power MOSFET operates in depletion mode. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
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