onsemiBD677AGDarlington BJT
Trans Darlington NPN 60V 4A 40000mW 3-Pin(3+Tab) TO-225 Box
| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 60 | |
| 60 | |
| 5 | |
| 4 | |
| 200 | |
| 2.8@40mA@2A | |
| 750@2A@3V | |
| 40000 | |
| -55 | |
| 150 | |
| Box | |
| Installation | Through Hole |
| Hauteur du paquet | 11.1(Max) mm |
| Largeur du paquet | 3(Max) mm |
| Longueur du paquet | 7.8(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-225 |
| 3 | |
| Forme de sonde | Through Hole |
Look no further than ON Semiconductor's NPN BD677AG Darlington transistor, which can amplify the signal to provide higher current gains. This product's maximum continuous DC collector current is 4 A, while its minimum DC current gain is 750@2A@3 V. It has a maximum collector emitter saturation voltage of 2.8@40mA@2A V. This Darlington transistor array's maximum emitter base voltage is 5 V. Its maximum power dissipation is 40000 mW. This product comes packaged in bulk, so the parts will be stored loosely. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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