| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Dual | |
| 2 | |
| 80 | |
| 65 | |
| 5 | |
| -55 to 150 | |
| 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | |
| 0.3@0.5mA@10mA|0.65@5mA@100mA | |
| 0.1 | |
| 15 | |
| 220@2mA@5V | |
| 380 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.9 |
| Largeur du paquet | 1.25 |
| Longueur du paquet | 2 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SC-88 |
| 6 | |
| Forme de sonde | Gull-wing |
Design various electronic circuits with this versatile PNP BC856BDW1T1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 380 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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