onsemiBC856BDW1T1GGP BJT

Trans GP BJT PNP 65V 0.1A 380mW 6-Pin SC-88 T/R

Design various electronic circuits with this versatile PNP BC856BDW1T1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 380 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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      Ships from:
      Stati Uniti d'America
      Date Code:
      2215+
      Manufacturer Lead Time:
      30 settimane
      Minimum Of :
      1
      Maximum Of:
      2999
      Country Of origin:
      Cina
         
      • Price: $0.0672
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Spedisce domani

      Ships from:
      Stati Uniti d'America
      Date Code:
      2215+
      Manufacturer Lead Time:
      30 settimane
      Country Of origin:
      Cina
      • In Stock: 56.975 pezzi
      • Price: $0.0672
    • (3000)

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      Increment:
      3000
      Ships from:
      Stati Uniti d'America
      Date Code:
      2429+
      Manufacturer Lead Time:
      30 settimane
      Country Of origin:
      Cina
      • In Stock: 177.000 pezzi
      • Price: $0.0164

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