Alpha and Omega SemiconductorAON6407MOSFET
Trans MOSFET P-CH 30V 85A 8-Pin DFN EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±25 | |
| 2.6 | |
| 85 | |
| 100 | |
| 1 | |
| 4.5@10V | |
| 75@10V | |
| 75 | |
| 3505@15V | |
| 7300 | |
| 75 | |
| 16 | |
| 94 | |
| 14 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 3.3@10V|4.4@6V | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.95(Max) mm |
| Largeur du paquet | 5.55 mm |
| Longueur du paquet | 5.2 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | DFN |
| Conditionnement du fournisseur | DFN EP |
| 8 | |
| Forme de sonde | No Lead |
This AON6407 power MOSFET from Alpha & Omega Semiconductor can be used for amplification in your circuit. Its maximum power dissipation is 83000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes tmos technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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