| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 50 | |
| ±10 | |
| 0.1 | |
| 10000 | |
| 1 | |
| 7800@4V | |
| 1.57@10V | |
| 1.57 | |
| 6.6@10V | |
| 150 | |
| 105 | |
| 42 | |
| 190 | |
| 18 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.9 mm |
| Largeur du paquet | 1.25 mm |
| Longueur du paquet | 2 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SC-70 |
| 3 | |
| Forme de sonde | Gull-wing |
This 5LN01M-TL-H power MOSFET from ON Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 150 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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