| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±10 | |
| 0.1 | |
| 10000 | |
| 1 | |
| 10400@4V | |
| 1.43@10V | |
| 1.43 | |
| 7.5@10V | |
| 150 | |
| 130 | |
| 55 | |
| 120 | |
| 24 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.75 mm |
| Largeur du paquet | 0.8 mm |
| Longueur du paquet | 1.6 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | DO |
| Conditionnement du fournisseur | SMCP |
| 3 | |
| Forme de sonde | Gull-wing |
Use ON Semiconductor's 3LP01S-TL-E power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 150 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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