Solitron Devices Transistors bipolaires
1 Solitron Devices Transistors bipolaires
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| N° de référence | Prix | Stock | Fabricant | Catégorie | Type | Category | Configuration | Number of Elements per Chip | Maximum Collector-Emitter Voltage - (V) | Maximum Collector-Base Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Maximum DC Collector Current - (A) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Turn-On Time - (ns) | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | AEC Qualified | Auto motive | P PAP | ECCN Code |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JAN2N6306 Trans GP BJT NPN 250V 8A 125000mW 3-Pin(2+Tab) TO-3 |
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Solitron Devices | GP BJT | NPN | Bipolar Power | Single | 1 | 250 | 500 | 8 | 2.3@2A@8A | 8 | 2 to 30 | 4@8A@5V|15@0.5A@5V|15@3A@5V | 125000 | 0.8@0.6A@3A|5@2A@8A | 600 | 3 | TO-3 | TO | No | No | No | No | EAR99 |