Solitron Devices Bipolar Transistors
1 Solitron Devices Bipolar Transistors
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| Part No. | Price | Stock | Manufacturer | Category | Type | Category | Number of Elements per Chip | Maximum Base-Emitter Saturation Voltage - (V) | Configuration | Maximum Collector-Emitter Voltage - (V) | Maximum Collector-Base Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Power Dissipation - (mW) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Turn-On Time - (ns) | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | AEC Qualified | Auto motive | P PAP | ECCN Code |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JAN2N6306 Trans GP BJT NPN 250V 8A 125000mW 3-Pin(2+Tab) TO-3 |
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Solitron Devices | GP BJT | NPN | Bipolar Power | 1 | 2.3@2A@8A | Single | 250 | 500 | 8 | 8 | 125000 | 2 to 30 | 4@8A@5V|15@0.5A@5V|15@3A@5V | 0.8@0.6A@3A|5@2A@8A | 600 | 3 | TO-3 | TO | No | No | No | No | EAR99 |