Infineon Technologies AG Diodes, Transistors and Thyristors
8 154 Infineon Technologies AG Diodes, Transistors and Thyristors
Editer colonnes
Personnaliser les colonnes
Veuillez sélectionner au moins 1 colonne
| N° de référence | Prix | Stock | Fabricant | Catégorie | Type | Technology | Number of SCRs/Diodes | Maximum Rate of Rise of Off-State Voltage - (V/us) | Maximum Breakover Voltage - (V) | Category | Bridge Type | Surge Current Rating - (A) | Material | Diode Type | Configuration | Channel Type | Maximum Reverse Voltage - (V) | Maximum Rate of Rise of On-State Current - (A/us) | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Peak Average Forward Current - (A) | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Repetitive Peak Forward Blocking Voltage - (V) | Peak RMS Reverse Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Continuous DC Collector Current - (A) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Minimum DC Current Gain | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Ambient Thermal Resistance | Frequency Band | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Transition Frequency - (MHz) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Output Capacitance - (pF) | Maximum Power Dissipation - (mW) | Minimum Frequency - (MHz) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Maximum Drain-Source Resistance - (Ohm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IPD028N06NF2SATMA1
Trans MOSFET N-CH 60V 24A 3-Pin(2+Tab) DPAK T/R
|
Stock
5 307
De $0.5704 à $0.7971
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Single | N | Enhancement | 1 | 60 | 20 | 24 | 68@10V | 68 | 4600@30V | 3000 | 2.85@10V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB081N06L3GATMA1
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
|
Stock
44 000
De $0.5357 à $0.5876
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Single | N | Enhancement | 1 | 60 | ±20 | 2.2 | 50 | 22@4.5V | 62 | 1.9 | 3700@30V | 690 | 79000 | 8.1@10V | 6.7@10V|7@10V|9.4@4.5V|9.7@4.5V | OptiMOS | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IQFH47N04NM6ATMA1
Trans MOSFET N-CH 40V 58A 12-Pin TSON EP T/R
|
Stock
100
De $2.2897 à $1.409
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Single Hex Drain Quint Source | N | Enhancement | 1 | 40 | 20 | 58 | 147@10V | 10200@20V | 3000 | 0.47@10V | 12 | TSON EP | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ0501NSIATMA1
Trans MOSFET N-CH 30V 25A 8-Pin TSDSON EP T/R
|
Stock
5 000
$0.3288
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Single Quad Drain Triple Source | N | Enhancement | 1 | 30 | 20 | 2 | 25 | 24@10V | 24 | 1500@15V | 2100(Typ) | 2@10V | 1.7@10V|2.1@4.5V | Tape and Reel | 8 | TSDSON EP | SON | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP4368PBFXKMA1
Trans MOSFET N-CH Si 75V 350A 3-Pin(3+Tab) TO-247AC Tube
|
Stock
3 658
De $2.8383 à $5.2353
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Si | Single | N | Enhancement | 1 | 75 | ±20 | 4 | 350 | 380@10V | 380 | 19230@50V | 520000 | 1.85@10V | 3 | TO-247AC | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FF55MR12W1M1HB11BPSA1 Trans MOSFET N-CH SiC 1.2KV 15A 10-Pin Tray |
Stock
24
$11.42
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | SiC | Dual | N | Enhancement | 2 | 1200 | 20 | 15 | 45@18V | 1350@800V | 52.9(Typ)@18V | Tray | 10 | Unknown | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IPB60R099CPATMA1
Trans MOSFET N-CH 650V 31A 3-Pin(2+Tab) D2PAK T/R
|
Stock
16 103
De $3.346 à $4.634
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Single | N | Enhancement | 1 | 650 | ±20 | 3.5 | 31 | 60@10V | 0.5 | 60 | 2800@100V | 255000 | 99@10V | Tape and Reel | 3 | D2PAK | TO | No | Yes | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR7546TRPBF
Trans MOSFET N-CH Si 60V 71A 3-Pin(2+Tab) DPAK T/R
|
Stock
14 001
$0.2766
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Si | Single | N | Enhancement | 1 | 60 | ±20 | 3.7 | 71 | 58@10V | 58 | 3020@25V | 99000 | 7.9@10V | 6.6@10V|8.5@6V | Tape and Reel | 3 | DPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP60R070CFD7XKSA1
Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-220 Tube
|
Stock
500
$2.6896
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Single | N | Enhancement | 1 | 600 | 20 | 4.5 | 31 | 67@10V | 62 | 0.8 | 67 | 2721@400V | 156000 | 70@10V | 57@10V | CoolMOS CFD7 | Tube | 3 | TO-220 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IAUC100N04S6L020ATMA1
Trans MOSFET N-CH 40V 100A Automotive AEC-Q101 8-Pin TDSON EP T/R
|
Stock
5 000
$0.3973
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Single Quad Drain Triple Source | N | Enhancement | 1 | 40 | ±16 | 2 | 100 | 34@10V | 34 | 2111@25V | 75000 | 2.04@10V | Tape and Reel | 8 | TDSON EP | SON | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPTG029N13NM6ATMA1
Trans MOSFET N-CH 135V 24A 9-Pin(8+Tab) HSOG T/R
|
Stock
1 775
De $3.1642 à $1.665
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Single Seven Source | N | Enhancement | 1 | 135 | 20 | 24 | 104@10V | 104 | 7100@68V | 3800 | 2.8@15V | Tape and Reel | 9 | HSOG | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFR181WH6327XTSA1
Trans RF BJT NPN 12V 0.02A 175mW Automotive AEC-Q101 3-Pin SOT-323 T/R
|
Stock
7
$0.0946
Par unité
|
Infineon Technologies AG | BJT FR | NPN | Si | Single | 12 | 20 | 1 | 2 | 0.02 | 8V/5mA | 70@5mA@8V | 50 to 120 | 0.35 | 8000(Typ) | 0.29 | 175 | 19 | 1.2(Min) | Tape and Reel | 3 | SOT-323 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC098N10NS5ATMA1
Trans MOSFET N-CH 100V 60A 8-Pin TDSON EP T/R
|
Stock
36
De $0.4344 à $0.775
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Single Quad Drain Triple Source | N | Enhancement | 1 | 100 | 20 | 3.8 | 60 | 22@10V | 50 | 22 | 1600@50V | 2500 | 9.8@10V | 8.2@10V|10.2@6V | Tape and Reel | 8 | TDSON EP | SON | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMZA120R017M2HXKSA1
Trans MOSFET N-CH SiC 1.2KV 97A Automotive Tube
|
Stock
240
De $12.198 à $14.003
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | SiC | Single Dual Source | N | Enhancement | 1 | 1200 | 23 | 97 | 89@18V | 2910@800V | 382000 | 23@18V | Tube | Unknown | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPF039N08NF2SATMA1
Trans MOSFET N-CH 80V 22A 8-Pin(7+Tab) D2PAK T/R
|
Stock
800
$1.2909
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Single Quint Source | N | Enhancement | 1 | 80 | 20 | 22 | 54@10V | 54 | 3800@40V | 3800 | 3.9@10V | Tape and Reel | 8 | D2PAK | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCX55H6327XTSA1
Trans GP BJT NPN 60V 1A 2000mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-89 T/R
|
Stock
10 785
$0.118
Par unité
|
Infineon Technologies AG | GP BJT | NPN | Bipolar Power | Si | Single Dual Collector | 60 | 60 | 1 | 5 | 1 | 25@5mA@2V|25@500mA@2V|40@150mA@2V | 2 to 30|30 to 50 | 0.5@50mA@500mA | 2000 | Tape and Reel | 4 | SOT-89 | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FP100R12KT4BOSA1
Trans IGBT Module N-CH 1200V 100A 515W 35-Pin ECONO3-3 Tray
|
Stock
17
$122.92
Par unité
|
Infineon Technologies AG | Module IGBT | Hex | N | ±20 | 1200 | 100 | 515 | Tray | 35 | ECONO3-3 | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGB50N65S5ATMA1
Trans IGBT Chip N-CH 650V 80A 270W 3-Pin(2+Tab) D2PAK T/R
|
Stock
700
De $2.23 à $3.48
Par unité
|
Infineon Technologies AG | Puce IGBT | Trench Stop 5 | Single | N | ±20 | 650 | 80 | 270 | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSO615NGXUMA1
Trans MOSFET N-CH 60V 2.6A 8-Pin DSO T/R Automotive AEC-Q101
|
Stock
10 000
$31.7329
Par unité
|
Infineon Technologies AG | MOSFET | Small Signal | Dual Dual Drain | N | Enhancement | 2 | 60 | ±20 | 2 | 2.6 | 14@10V | 100 | 14 | 300@25V | 90 | 2000 | 150@4.5V | 120@4.5V | SIPMOS | Tape and Reel | 8 | DSO | SO | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW65R041CFD7XKSA1
Trans MOSFET N-CH 650V 50A 3-Pin(3+Tab) TO-247 Tube
|
Stock
92
De $5.355 à $8.90
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Single | N | Enhancement | 1 | 650 | 20 | 4.5 | 50 | 102@10V | 102 | 4975@400V | 227000 | 41@10V | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPN60R3K4CEATMA1
Trans MOSFET N-CH 600V 2.6A 3-Pin SOT-223 T/R
|
Stock
81 000
$0.025
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Single | N | Enhancement | 1 | 600 | 20 | 3.5 | 2.6 | 4.6@10V | 75 | 4.6 | 93@100V | 5000 | 3400@10V | 3060@10V | Tape and Reel | 3 | SOT-223 | SOT | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL40S212ARMA1
Trans MOSFET N-CH Si 40V 254A 3-Pin(2+Tab) D2PAK T/R
|
Stock
24 000
De $0.8035 à $0.9417
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Si | Single | N | Enhancement | 1 | 40 | ±20 | 2.4 | 254 | 91@4.5V | 8320@25V | 231000 | 1.9@10V | 1.5@10V|1.9@4.5V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPQC65R125CFD7AXTMA1
Trans MOSFET N-CH 650V 24A 22-Pin HDSOP EP T/R Automotive AEC-Q101
|
Stock
750
De $2.0833 à $1.0531
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Single Ten Source Eleven Drain | N | Enhancement | 1 | 650 | 20 | 24 | 32@10V | 32 | 1566@400V | 160000 | 125@10V | 22 | HDSOP EP | SO | Yes | AEC-Q101 | Yes | Yes | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC857SH6327XTSA1
Trans GP BJT PNP 45V 0.1A 250mW 6-Pin SOT-363 T/R Automotive AEC-Q101
|
Stock
29 860
De $0.0472 à $0.0137
Par unité
|
Infineon Technologies AG | GP BJT | PNP | Bipolar Small Signal | Si | Dual | 45 | 50 | 2 | 5 | 0.7(Typ)@0.5mA@10mA|0.85(Typ)@5mA@100mA | 0.1 | 200@2mA@5V | 200 to 300 | 0.3@0.5mA@10mA|0.65@5mA@100mA | 250 | Tape and Reel | Unknown | 6 | SOT-363 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSD314SPE L6327
Trans MOSFET P-CH 30V 1.5A 6-Pin SOT-363 T/R Automotive AEC-Q101
|
Stock
956
De $0.0627 à $0.148
Par unité
|
Infineon Technologies AG | MOSFET | Small Signal | Single Quad Drain | P | Enhancement | 1 | 30 | ±20 | 2 | 1.5 | 2.9@10V | 2.9 | 221@15V | 500 | 140@10V | Tape and Reel | 6 | SOT-363 | SOT | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No |