WOLFSPEED, INCCAB011A12GM3TMOSFETs
SiC, Module, 11mΩ, 1200V, 48 mm, AlN GM3, Half-Bridge, Industrial, Gen 3, Pre-Applied TIM
Features
- • Ultra-Low Loss
- • High Frequency Operation
- • Zero Turn-Off Tail Current from MOSFET
- • Normally-Off, Fail-Safe Device Operation
- • Aluminum Nitride Ceramic Substrate
- • Optional Pre-Applied Thermal Interface Material
Benefits
- • Enables Compact, Lightweight Systems
- • Increased System Efficiency, due to Low Switching & Conduction Losses of SiC
- • Reduced Thermal Requirements and System Cost
Target Applications
- • DC-DC Converters
- • EV Chargers
- • High-Efficiency Converters / Inverters
- • Renewable Energy
- • Smart-Grid / Grid-Tied Distributed Generation
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| SiC | |
| Dual | |
| Enhancement | |
| N | |
| 2 | |
| 1200 | |
| 23 | |
| -40 to 175 | |
| 149(Typ) | |
| 14.8@15V | |
| 354@15V | |
| 11000@1000V | |
| 470000(Typ) | |
| -40 | |
| 125 | |
| Industrial | |
| Mounting | Screw |
| Package Height | 12.33 mm |
| Package Width | 56.7 mm |
| Package Length | 62.8 mm |
| PCB changed | 36 |
| 36 |
| EDA / CAD Models |
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