TT Electronics / Semelab Diodes, Transistors and Thyristors
332 TT Electronics / Semelab Diodes, Transistors and Thyristors
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| Part No. | Price | Stock | Manufacturer | Category | Type | Category | Material | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Number of Elements per Chip | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Maximum Gate Threshold Voltage - (V) | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Ambient Thermal Resistance | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| IRFY340-QR-B N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS |
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TT Electronics / Semelab | MOSFETs | 3 | TO-257AB | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFY430 Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-257AB |
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TT Electronics / Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 500 | ±20 | 4 | 4.5 | 1840@10V | 29.5(Max)@10V | 29.5(Max) | 75000 | 610@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| D1012UK Trans RF MOSFET N-CH 70V 15A 5-Pin Case DH |
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TT Electronics / Semelab | RF FETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 15 | 290000 | 180(Max)@28V | 1 | 100 | 10(Min) | 5 | Case DH | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D2207UK RF MOSFET, RF VDMOS Power |
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TT Electronics / Semelab | RF FETs | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| D2224UK Trans RF MOSFET 40V 8A 8-Pin SO |
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TT Electronics / Semelab | RF FETs | Si | Dual Quad Source | 2 | 40 | ±20 | 8 | 29000 | 48(Max)@0V | 1 | 5 | 7(Min) | 8 | SO | SO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
| D2230UK Trans RF MOSFET 40V 4A 8-Pin Case F-0127 |
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TT Electronics / Semelab | RF FETs | Si | Dual Quad Source | 2 | 40 | ±20 | 4 | 17500 | 24(Max)@0V | 1 | 5 | 10(Min) | 8 | Case F-0127 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
| BDX67 Trans Darlington NPN 60V 16A 150000mW 3-Pin(2+Tab) TO-3 |
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TT Electronics / Semelab | Darlington BJT | NPN | Single | 60 | 1 | 80 | 5 | 16 | 1000@10A@3V | 150000 | 2@40mA@10A | 3 | TO-3 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
2N2907ACSM-JQR-B
Trans GP BJT PNP 60V 0.6A 3-Pin CLLCC-1
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TT Electronics / Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 60 | 1 | 60 | 5 | 2.6@50mA@500mA|1.3@15mA@150mA | 0.6 | 50 to 120 | 50@500mA@10V|100@150mA@10V|100@10mA@10V|100@1mA@10V|75@0.1mA@10V | 500 | 1.6@50mA@500mA|0.4@15mA@150mA | 3 | CLLCC-1 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
2N3501DCSM
Trans GP BJT NPN 150V 0.3A 500mW 6-Pin CLLCC-2
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TT Electronics / Semelab | GP BJT | NPN | Bipolar Small Signal | Si | Dual | 150 | 2 | 150 | 6 | 0.8@1mA@10mA|0.9@5mA@50mA | 0.3 | 2 to 30|30 to 50|50 to 120 | 35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|20@300mA@10V | 500 | 0.2@1mA@10mA|0.25@5mA@50mA|0.4@15mA@150mA | 6 | CLLCC-2 | LCC | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
2N3720
Trans GP BJT PNP 60V 3A 1000mW 3-Pin TO-39
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TT Electronics / Semelab | GP BJT | PNP | Bipolar Power | Single | 60 | 1 | 60 | 4 | 1.5@100mA@1A|2.3@300mA@3A | 3 | 2 to 30 | 20@500mA@1.5V|25@1A@1.5V | 1000 | 0.75@100mA@1A|1.5@300mA@3A | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| 2N6299 Trans Darlington PNP 80V 8A 3-Pin(2+Tab) TO-66 |
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TT Electronics / Semelab | Darlington BJT | PNP | Single | 80 | 8 | 3 | TO-66 | TO | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||
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2N6190
Trans GP BJT PNP 80V 5A 10000mW 3-Pin TO-39
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TT Electronics / Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 80 | 1 | 80 | 6 | 1.2@0.2A@2A|1.8@0.5A@5A | 5 | 2 to 30|30 to 50 | 30@0.5A@2V|30@2A@2V|20@5A@2V | 10000 | 0.7@0.2A@2A|1.2@0.5A@5A | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| 2N2857.02SML Trans RF BJT NPN 15V 0.04A 200mW 4-Pin TO-72 |
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TT Electronics / Semelab | RF BJT | NPN | Si | Single | 15 | 1 | 30 | 2.5 | 0.04 | 10V/12mA | 30 to 50 | 30@3mA@1V | 1.4 | 200 | 0.03(Min) | 19(Max) | 1900 | 4.5 | 4 | TO-72 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||
| D2081UK.FTR Trans RF MOSFET N-CH 65V 0.2A 4-Pin(3+Tab) SOT-223 |
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TT Electronics / Semelab | RF FETs | Si | N | Single Dual Drain | Enhancement | 1 | 65 | ±20 | 0.2 | 2000 | 12(Max)@0V | 0 | 0.75 | 11(Min) | 4 | SOT-223 | SOT | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| 2N2219A-O-B High Speed Medium Power, Npn Switching Transistor |
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TT Electronics / Semelab | GP BJT | 3 | TO-39 | TO | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||
2N3799X
Trans GP BJT PNP 50V 0.05A 3-Pin TO-18
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TT Electronics / Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 50 | 1 | 60 | 5 | 0.8@100uA@1mA|0.7@10uA@100uA | 0.05 | 300 to 500|200 to 300|120 to 200|50 to 120 | 250@10mA@5V|300@1mA@5V|300@500uA@5V|225@10uA@5V|75@1uA@5V | 360 | 0.25@100uA@1mA|0.2@10uA@100uA | 500 | 4 | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| D1020UK Trans RF MOSFET N-CH 70V 25A 5-Pin Case DR |
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TT Electronics / Semelab | RF FETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 25 | 389000 | 300(Max)@28V | 1 | 150 | 10(Min) | 5 | Case DR | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D2003UK Trans RF MOSFET N-CH 65V 1A 5-Pin Case DQ |
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TT Electronics / Semelab | RF FETs | Si | N | Dual Common Source | Enhancement | 2 | 65 | ±20 | 1 | 35000 | 12(Max)@28V | 50 | 5 | 13(Min) | 5 | Case DQ | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
SML05SC06D3A
Diode Schottky 600V 5A 2-Pin DLCC
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TT Electronics / Semelab | Rectifiers | Schottky Diode | Single | 600 | 5 | 60 | 1.8 | 200 | 2960 | 2 | DLCC | LCC | No | No | No | No | No | 3A001.h | No | No | ||||||||||||||||||||||||||||||||||||||||
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2N6661-JQR-B
Trans MOSFET N-CH 90V 0.9A 3-Pin TO-39
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TT Electronics / Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 90 | ±20 | 0.9 | 4000@10V | 725 | 50(Max)@25V | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
2N4209C1A
Trans GP BJT PNP 15V 0.05A 360mW 3-Pin CLLCC
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TT Electronics / Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 15 | 1 | 15 | 4.5 | 0.8@0.1mA@1mA|0.95@1mA@10mA|1.5@5mA@50mA | 0.05 | 30 to 50|50 to 120 | 35@1mA@0.5V|50@10mA@0.3V|55@10mA@1V|40@50mA@1V | 250 | 3.5(Max) | 360 | 0.15@0.1mA@1mA|0.18@1mA@10mA|0.6@5mA@50mA | 3(Max) | 15 | 3 | CLLCC | LCC | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||
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2N2907ACSM-QR-EB
Trans GP BJT PNP 60V 0.6A 3-Pin CLLCC-1
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TT Electronics / Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 60 | 1 | 60 | 5 | 1.3@15mA@150mA|2.6@50mA@500mA | 0.6 | 50 to 120 | 50@500mA@10V|100@150mA@10V|100@10mA@10V|100@1mA@10V|75@0.1mA@10V | 500 | 0.4@15mA@150mA|1.6@50mA@500mA | 3 | CLLCC-1 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
2N2222ADCSM-QR-EB
Trans GP BJT NPN 50V 0.8A 6-Pin CLLCC-2
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TT Electronics / Semelab | GP BJT | NPN | Bipolar Power | Single | 50 | 1 | 75 | 6 | 2@50mA@500mA|1.2@15mA@150mA | 0.8 | 50 to 120|30 to 50 | 30@500mA@10V|100@150mA@10V|100@10mA@10V|75@1mA@10V|50@0.1mA@10V | 500 | 1@50mA@500mA|0.3@15mA@150mA | 250 | 6 | CLLCC-2 | LCC | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| IRF150 Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-3 |
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TT Electronics / Semelab | MOSFETs | Power MOSFET | N | Single | 1 | 100 | ±20 | 38 | 65@10V | 125(Max)@10V | 125(Max) | 150000 | 3700@25V | 3 | TO-3 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
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2N2222ACSM
Trans GP BJT NPN 50V 0.8A 3-Pin CLLCC-1
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TT Electronics / Semelab | GP BJT | NPN | Bipolar Power | Single | 50 | 1 | 75 | 6 | 2@50mA@500mA|1.2@15mA@150mA | 0.8 | 50 to 120|30 to 50 | 30@500mA@10V|100@150mA@10V|100@10mA@10V|75@1mA@10V|50@0.1mA@10V | 325 | 500 | 1@50mA@500mA|0.3@15mA@150mA | 250 | 35 | 3 | CLLCC-1 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No |