Infineon Technologies AG Diodes, Transistors and Thyristors
8,154 Infineon Technologies AG Diodes, Transistors and Thyristors
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| Part No. | Price | Stock | Manufacturer | Category | Type | Technology | Number of SCRs/Diodes | Maximum Rate of Rise of Off-State Voltage - (V/us) | Maximum Breakover Voltage - (V) | Category | Bridge Type | Surge Current Rating - (A) | Material | Diode Type | Configuration | Channel Type | Maximum Reverse Voltage - (V) | Maximum Rate of Rise of On-State Current - (A/us) | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Peak Average Forward Current - (A) | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Repetitive Peak Forward Blocking Voltage - (V) | Peak RMS Reverse Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Continuous DC Collector Current - (A) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Minimum DC Current Gain | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Ambient Thermal Resistance | Frequency Band | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Transition Frequency - (MHz) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Output Capacitance - (pF) | Maximum Power Dissipation - (mW) | Minimum Frequency - (MHz) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Maximum Drain-Source Resistance - (Ohm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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IPI029N06NAKSA1
Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube
|
Stock
1,000
From $0.8964 to $2.8051
Per Unit
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single | N | Enhancement | 1 | 60 | ±20 | 2.8(Typ) | 100 | 56@10V | 56 | 4100@30V | 3000 | 2.9@10V | 2.7@10V|3.3@6V | Tube | 3 | TO-262 | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP048N12N3GXKSA1
Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-220 Tube
|
Stock
676
$1.71
Per Unit
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single | N | Enhancement | 1 | 120 | ±20 | 4 | 100 | 137@10V | 137 | 9030@60V | 300000 | 4.8@10V | Tube | 3 | TO-220 | TO | No | No | Unknown | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMZA65R027M1HXKSA1
CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package
|
Stock
112
$4.088
Per Unit
|
Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | Single Dual Source | N | Enhancement | 1 | 650 | 23 | 5.7 | 60 | 63@18V | 62 | 0.66 | 2131@400V | 244 | 227000 | 34@18V | 27@18V | Tube | 4 | TO-247 | TO | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SPP07N60C3XKSA1
Trans MOSFET N-CH 600V 7.3A 3-Pin(3+Tab) TO-220AB Tube
|
Stock
23,413
From $0.7927 to $1.4286
Per Unit
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single | N | Enhancement | 1 | 600 | ±20 | 3.9 | 7.3 | 21@10V | 62 | 1.5 | 21 | 790@25V | 83000 | 600@10V | 540@10V | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FP35R12W2T7BPSA1 Trans IGBT Module N-CH 1200V 35A 35-Pin Tray |
Stock
15
$43.55
Per Unit
|
Infineon Technologies AG | IGBT Modules | Hex | N | ±20 | 1200 | 35 | Tray | 35 | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFB4310PBF
Trans MOSFET N-CH 100V 130A 3-Pin(3+Tab) TO-220AB Tube
|
Stock
1,100
From $1.1555 to $1.4706
Per Unit
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single | N | Enhancement | 1 | 100 | ±20 | 4 | 130 | 170@10V | 62 | 0.5 | 170 | 7670@50V | 540 | 300000 | 7@10V | 5.6@10V | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPC100N04S51R2ATMA1
Trans MOSFET N-CH 40V 100A 8-Pin TDSON EP T/R Automotive AEC-Q101
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Stock
19,890
From $0.8098 to $1.0087
Per Unit
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single Quad Drain Triple Source | N | Enhancement | 1 | 40 | ±20 | 3.4 | 100 | 99@10V | 50 | 1 | 99 | 5750@25V | 1600 | 150000 | 1.2@10V | 1@10V|1.2@7V | Tape and Reel | 8 | TDSON EP | SON | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGOT65R035D2AUMA1
Enhancement-Mode Power GaN Transistor
|
Stock
800
From $5.224 to $7.655
Per Unit
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Infineon Technologies AG | MOSFETs | 20 | DSO EP | SO | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSP170IATMA1
Trans MOSFET P-CH 60V 1.88A 4-Pin(3+Tab) SOT-223 T/R
|
Stock
1,980
From $0.1178 to $0.2273
Per Unit
|
Infineon Technologies AG | MOSFETs | Small Signal | Single Dual Drain | P | Enhancement | 1 | 60 | 20 | 1.88 | 10.8@10V | 10.8 | 420@30V | 180 | 260@10V | 4 | SOT-223 | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMZA120R020M1HXKSA1
Trans MOSFET N-CH SiC 1.2KV 98A 4-Pin(4+Tab) TO-247 Tube
|
Stock
173
From $20.50 to $21.20
Per Unit
|
Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | Single Dual Source | N | Enhancement | 1 | 1200 | 20 | 5.2 | 98 | 109@18V | 62 | 0.4 | 3460@800V | 159 | 375000 | 26.9@18V | 19@18V|23.7@15V | Tube | 4 | TO-247 | TO | Unknown | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SPP11N60C3XKSA1
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 Tube
|
Stock
17,736
From $1.0836 to $1.4117
Per Unit
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single | N | Enhancement | 1 | 600 | ±20 | 3.9 | 11 | 45@10V | 62 | 1 | 45 | 1200@25V | 125000 | 380@10V | 340@10V | Tube | 3 | TO-220 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLB3036PBF
Trans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-220AB Tube
|
Stock
5,238
$1.544
Per Unit
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | Single | N | Enhancement | 1 | 60 | ±16 | 270 | 91@4.5V | 0.4 | 11210@50V | 380000 | 2.4@10V | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ISP26DP06NMSATMA1
Trans MOSFET P-CH 60V 1.9A 4-Pin(3+Tab) SOT-223 T/R
|
Stock
6,000
From $0.143 to $0.1674
Per Unit
|
Infineon Technologies AG | MOSFETs | Small Signal | Single | P | Enhancement | 1 | 60 | 20 | 1.9 | 10.8@10V | 10.8 | 420@30V | 1800 | 260@10V | Tape and Reel | 4 | SOT-223 | SOT | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SPP80P06PHXKSA1
Trans MOSFET P-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101
|
Stock
1,389
From $1.6397 to $2.0479
Per Unit
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single | P | Enhancement | 1 | 60 | ±20 | 4 | 80 | 115@10V | 62 | 0.4 | 115 | 4026@25V | 1252 | 340000 | 23@10V | 21@10V | Tube | 3 | TO-220 | TO | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FS150R12KT4B11BOSA1
Trans IGBT Module N-CH 1200V 150A 750W 35-Pin ECONO3-4 Tray
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Stock
2
$20.07
Per Unit
|
Infineon Technologies AG | IGBT Modules | Field Stop|Trench | Hex | N | ±20 | 1200 | 150 | 750 | Tray | 35 | ECONO3-4 | No | Unknown | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SMBD7000E6327HTSA1
Diode Switching Si 100V 0.2A 3-Pin SOT-23 T/R Automotive AEC-Q101
|
Stock
116,405
From $0.0485 to $0.0497
Per Unit
|
Infineon Technologies AG | Rectifiers | Switching Diode | Si | Dual Series | 100 | 0.2 | 4.5 | 1.25@0.15A | 0.5 | 2 | 4 | 330 | Tape and Reel | 3 | SOT-23 | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC067N06LS3GATMA1
Trans MOSFET N-CH 60V 15A 8-Pin TDSON EP T/R
|
Stock
26,319
From $0.5062 to $1.5246
Per Unit
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single Quad Drain Triple Source | N | Enhancement | 1 | 60 | 20 | 2.2 | 15 | 23@4.5V|51@10V | 62 | 1.8 | 51 | 3800@30V | 710 | 2500 | 6.7@10V | 5.4@10V|8@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC009NE2LSATMA1
Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R
|
Stock
3,660
From $0.854 to $2.11
Per Unit
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single Quad Drain Triple Source | N | Enhancement | 1 | 25 | ±20 | 2.2 | 41 | 72@4.5V|126@10V | 126 | 5800@12V | 2500 | 0.9@10V | 0.75@10V|1@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMZA120R034M2HXKSA1
Trans MOSFET N-CH SiC 1.2KV 55A Automotive Tube
|
Stock
240
From $5.929 to $8.576
Per Unit
|
Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | Single Dual Source | N | Enhancement | 1 | 1200 | 23 | 55 | 45@18V | 1510@800V | 244000 | 45@18V | Tube | Unknown | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFP650H6327XTSA1
Trans RF BJT NPN 4V 0.15A 500mW 4-Pin SOT-343 T/R Automotive AEC-Q101
|
Stock
1,794
From $0.1988 to $0.5074
Per Unit
|
Infineon Technologies AG | RF BJT | NPN | SiGe | Single Dual Emitter | 4 | 13 | 1 | 1.2 | 0.15 | 3V/70mA | 100@70mA@3V | 50 to 120 | 1.3 | 0.26 | 500 | 17(Typ) | 38 | 31 | 1.6(Min) | Tape and Reel | 4 | SOT-343 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ035N03MSGATMA1
Trans MOSFET N-CH 30V 18A 8-Pin TSDSON EP T/R
|
Stock
5,000
$0.3189
Per Unit
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single Quad Drain Triple Source | N | Enhancement | 1 | 30 | ±20 | 2 | 18 | 27@4.5V|56@10V | 56 | 4300@15V | 2100 | 3.5@10V | 2.9@10V|3.4@4.5V | Tape and Reel | 8 | TSDSON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DD171N18KHPSA1
Diode 1.8KV 171A 3-Pin PB34-1 Tray
|
Stock
1
$136.63
Per Unit
|
Infineon Technologies AG | Rectifiers | Dual Series | 1800 | 171 | 6600 | 1.26@500A | 20000 | Tray | 3 | PB34-1 | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB80N06S405ATMA2
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
|
Stock
1,000
$0.9387
Per Unit
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single | N | Enhancement | 1 | 60 | ±20 | 4 | 80 | 62@10V | 62 | 5000@25V | 107000 | 5.4@10V | 4.4@10V|4.7@10V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF600R12KE4BOSA1
Trans IGBT Module N-CH 1200V 600A 7-Pin 62MM-1 Tray
|
Stock
6
$219.38
Per Unit
|
Infineon Technologies AG | IGBT Modules | Field Stop|Trench | Dual | N | ±20 | 1200 | 600 | 7 | 62MM-1 | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA60R145CFD7XKSA1
Trans MOSFET N-CH 600V 9A 3-Pin(3+Tab) TO-220FP Tube
|
Stock
485
$1.858
Per Unit
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single | N | Enhancement | 1 | 600 | 20 | 4.5 | 9 | 31@10V | 31 | 1330@400V | 27000 | 145@10V | 127@10V | Tube | 3 | TO-220FP | TO | No | No | No | No | EAR99 | No | No |