Infineon Technologies AGIMZA65R027M1HXKSA1MOSFETs

CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device’s performance, robustness, and ease of use. The IMZA65R057M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation. Infineon’s SiC MOSFET in TO247 4-pin package reduces parasitic source inductance effects on the gate circuit enabling faster switching and increased efficiency.

Features

•  Low capacitances
•  Optimized switching behavior at higher currents
•  Commutation robust fast body diode with low reverse recovery charge (Qrr)
•  Superior gate oxide reliability
•  Excellent thermal behavior
•  Increased avalanche capability
•  Works with standard drivers
•  4-pin package

Benefits

•  High performance, high reliability and ease of use
•  most performing ~60 mΩ range device in the market
•  Allows high system efficiency
•  Reduces system cost and complexity
•  Enables smaller system size
•  Works in topologies with continuous hard commutation
•  Fit for high temperature and harsh operations
•  Enables bi-directional topologies

Target applications

•  Server
•  Telecom
•  SMPS
•  Solar energy systems
•  Energy storage and battery formation
•  UPS
•  EV charging
•  Motor drives

Related Products

Infineon releases intermediate RDS(on)s to offer a particularly granular SiC-based MOSFET portfolio.
Find all parts of the portfolio extension in the table below.