TT Electronics / Semelab 二极管、晶体管及晶闸管
| 型号 | 价格 | 库存 | 供应商 | 类别 | Type | Category | Material | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Operational Bias Conditions | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
2N5416CSM4
Trans GP BJT PNP 300V 1A 1000mW 4-Pin CLLCC-3
|
|
Semelab | 通用双极型晶体管 | PNP | Bipolar Power | Si | Single | 300 | 350 | 1 | 6 | 1 | 150 | 1000 | 30 to 50 | 30@50mA@10V | 25(Max) | 0.5@5mA@50mA | 4 | CLLCC-3 | LCC | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
BUX49
Trans GP BJT NPN 90V 3.5A 10000mW 3-Pin TO-39
|
|
Semelab | 通用双极型晶体管 | NPN | Bipolar Power | Single | 90 | 1 | 3.5 | 10000 | 2 to 30 | 20@1.7A@4V | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
BUX23
Trans GP BJT NPN 325V 30A 250000mW 3-Pin(2+Tab) TO-3
|
|
Semelab | 通用双极型晶体管 | NPN | Bipolar Power | Si | Single | 325 | 400 | 1 | 7 | 1.5@3.2A@16A | 30 | 250000 | 2 to 30 | 12@8A@4V|8@16A@4V | 0.6 | 0.8@1.6A@8A|1@3.2A@16A | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
2N7002CSM-JQR-B
Trans MOSFET N-CH 60V 0.115A 3-Pin LCC-1
|
|
Semelab | MOSFETs | N | Enhancement | 3 | CLLCC-1 | LCC | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||
2N3440-JQR-B
Trans GP BJT NPN 250V 1A 5000mW 3-Pin TO-39
|
|
Semelab | 通用双极型晶体管 | NPN | Bipolar Power | Si | Single | 250 | 300 | 1 | 7 | 1.3@4mA@50mA | 1 | 175 | 5000 | 30 to 50 | 40@20mA@10V | 35 | 10(Max) | 0.5@4mA@50mA | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||
2N3720
Trans GP BJT PNP 60V 3A 1000mW 3-Pin TO-39
|
|
Semelab | 通用双极型晶体管 | PNP | Bipolar Power | Single | 60 | 60 | 1 | 4 | 1.5@100mA@1A|2.3@300mA@3A | 3 | 1000 | 2 to 30 | 20@500mA@1.5V|25@1A@1.5V | 0.75@100mA@1A|1.5@300mA@3A | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
BUP51
Trans GP BJT NPN 175V 80A 3-Pin(2+Tab) TO-3
|
|
Semelab | 通用双极型晶体管 | NPN | Bipolar Power | Si | Single | 175 | 1 | 10 | 1.1@2A@20A|1.2@4A@40A|1.5@14A@70A | 80 | 300000 | 2 to 30 | 20@20A@4V|20@40A@4V|10@70A@4V | 0.5@2A@20A|0.6@4A@40A|1@14A@70A | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
2N2369ACSM-QR-EB
Trans GP BJT NPN 15V 0.2A 360mW 3-Pin CLLCC-1
|
|
Semelab | 通用双极型晶体管 | NPN | Bipolar Small Signal | Si | Single | 15 | 40 | 1 | 4.5 | 0.85@1mA@10mA|0.9@3mA@30mA|1.2@10mA@100mA | 0.2 | 360 | 2 to 30|30 to 50 | 40@10mA@0.35V|40@10mA@1V|30@30mA@0.4V|20@100mA@1V | 0.2@1mA@10mA|0.25@3mA@30mA|0.45@10mA@100mA | 3 | CLLCC-1 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| D1222UK Trans RF MOSFET 40V 30A 5-Pin Case DK |
|
Semelab | 射频 MOSFETs | Dual Common Source | 2 | 40 | ±20 | 7 | 290000 | 30 | 180(Max)@0V | 10(Min) | 1 | 500 | 5 | Case DK | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
BUX50-QR
Bipolar NPN Device in A Hermetically Sealed TO-39 Metal Package
|
|
Semelab | 通用双极型晶体管 | 3 | TO-39 | TO | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||
2N3209XCSM
Trans GP BJT PNP 20V 0.2A 300mW 3-Pin CLLCC-1
|
|
Semelab | 通用双极型晶体管 | PNP | Bipolar Small Signal | Si | Single | 20 | 20 | 1 | 4 | 0.98@1mA@10mA|1.2@3mA@30mA|1.7@10mA@100mA | 0.2 | 420 | 300 | 2 to 30|30 to 50 | 25@10mA@0.3V|30@30mA@0.5V|15@100mA@1V | 5(Max) | 0.2@1mA@10mA|0.25@3mA@30mA|0.75@10mA@100mA | 3 | CLLCC-1 | LCC | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
2N4392CSM
Trans JFET N-CH 40V Si 3-Pin CLLCC-1
|
|
Semelab | JFETs | Si | N | Single | 40 | 40 | 40 | 300 | 60000 | 3 | CLLCC-1 | LCC | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
2N3904DCSM
Trans GP BJT NPN 40V 0.2A 310mW 6-Pin CLLCC-2
|
|
Semelab | 通用双极型晶体管 | NPN | Bipolar Power | Dual | 40 | 2 | 0.2 | 310 | 50 to 120 | 100@1mA@10V | 6 | CLLCC-2 | LCC | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
2N3637
Trans GP BJT PNP 175V 1A 1000mW 3-Pin TO-39
|
|
Semelab | 通用双极型晶体管 | PNP | Bipolar Power | Si | Single | 175 | 175 | 1 | 5 | 0.8@1mA@10mA|0.9@5mA@50mA | 1 | 175 | 1000 | 50 to 120 | 55@0.1mA@10V|90@1mA@10V|100@10mA@10V|100@50mA@10V|60@150mA@10V | 35 | 10(Max) | 0.3@1mA@10mA|0.6@5mA@50mA | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
| IRFE130 Trans MOSFET N-CH 100V 7.4A 16-Pin LCC-4 |
|
Semelab | MOSFETs | Power MOSFET | N | Single Hex Drain Dual Gate Octal Source | Enhancement | 1 | 100 | ±20 | 4 | 22000 | 7.4 | 207@10V | 28.5(Max)@10V | 28.5(Max) | 650@25V | 16 | LCC-4 | LCC | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| IRF150 Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-3 |
|
Semelab | MOSFETs | Power MOSFET | N | Single | 1 | 100 | ±20 | 150000 | 38 | 65@10V | 125(Max)@10V | 125(Max) | 3700@25V | 3 | TO-3 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
2N2222ACSM4
Trans GP BJT NPN 40V 0.8A 350mW 4-Pin CLLCC-3
|
|
Semelab | 通用双极型晶体管 | NPN | Bipolar Small Signal | Si | Single | 40 | 75 | 1 | 6 | 1.2@15mA@150mA|2@50mA@500mA | 0.8 | 350 | 30 to 50|50 to 120 | 35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|40@500mA@10V|50@150mA@1V | 8(Max) | 0.3@15mA@150mA|1@50mA@500mA | 4 | CLLCC-3 | LCC | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
BFX85-QR
Trans GP BJT NPN 60V 1A 800mW 3-Pin TO-39
|
|
Semelab | 通用双极型晶体管 | NPN | Bipolar Power | Si | Single | 60 | 100 | 1 | 1.2@1mA@10mA|1.3@15mA@150mA|1.5@50mA@500mA|2@100mA@1A | 1 | 200 | 800 | 2 to 30|30 to 50|50 to 120 | 50@10mA@10V|70@150mA@10V|30@500mA@10V|15@1A@10V | 35 | 7 | 0.2@1mA@10mA|0.35@15mA@150mA|1@50mA@500mA|1.6@100mA@1A | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
2N7002CSM-QR-B
Trans MOSFET N-CH 60V 0.115A 3-Pin CLLCC-1
|
|
Semelab | MOSFETs | Small Signal | N | Single | Enhancement | 1 | 60 | ±40 | 350 | 0.115 | 7500@10V | 50(Max)@25V | 3 | CLLCC-1 | LCC | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| BDS13-B Trans GP BJT PNP 60V 15A 43750mW 3-Pin(3+Tab) TO-220M |
|
Semelab | 通用双极型晶体管 | PNP | Bipolar Power | Si | Single | 60 | 60 | 1 | 5 | 2.5@2.5A@10A | 15 | 43750 | 30 to 50|2 to 30 | 40@0.5A@4V|15@5A@4V|5@10A@4V | 1@0.5A@5A|3@2.5A@10A | 3 | TO-220M | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
BSX52A
Trans GP BJT NPN 50V 0.2A 300mW 3-Pin TO-18
|
|
Semelab | 通用双极型晶体管 | NPN | Bipolar Power | Single | 50 | 1 | 0.2 | 300 | 300 to 500 | 300@2mA@4.5V | 3 | TO-18 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| BDS19 Trans GP BJT PNP 150V 8A 43750mW 3-Pin(3+Tab) TO-257AB |
|
Semelab | 通用双极型晶体管 | PNP | Bipolar Power | Si | Single | 150 | 150 | 1 | 5 | 8 | 43750 | 2 to 30|30 to 50 | 40@0.5A@2V|15@4A@2V | 0.4@0.05A@0.5A|1.5@0.4A@4A | 3 | TO-257AB | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
2N2369ADCSM
Trans GP BJT NPN 15V 0.2A 500mW 6-Pin CLLCC-2
|
|
Semelab | 通用双极型晶体管 | NPN | Bipolar Small Signal | Si | Dual | 15 | 40 | 2 | 4.5 | 0.85@1mA@10mA|0.9@3mA@30mA|1.2@10mA@100mA | 0.2 | 486 | 500 | 2 to 30|30 to 50 | 40@10mA@0.35V|40@10mA@1V|30@30mA@0.4V|20@100mA@1V | 0.2@1mA@10mA|0.25@3mA@30mA|0.45@10mA@100mA | 6 | CLLCC-2 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
| D1027UK Trans RF MOSFET N-CH 70V 30A 5-Pin Case DR |
|
Semelab | 射频 MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 438000 | 30 | 360(Max)@28V | 13(Min) | 1 | 150 | 200 | 5 | Case DR | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
2N5153SMD05
Trans GP BJT PNP 80V 5A 1000mW 3-Pin SMD-0.5
|
|
Semelab | 通用双极型晶体管 | PNP | Bipolar Power | Si | Single | 80 | 100 | 1 | 5.5 | 1.45@250mA@2.5A|2.2@500mA@5A | 5 | 150 | 1000 | 30 to 50|50 to 120 | 50@50mA@5V|70@2.5A@5V|35@2.5A@5V | 1.75 | 250(Max) | 0.75@250mA@2.5A|1.5@500mA@5A | 3 | SMD-0.5 | No | No | No | No | EAR99 | No | No |