TT Electronics / Semelab Diodes, transistors, thyristors
333 TT Electronics / Semelab Diodes, transistors, thyristors
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| N° de référence | Prix | Stock | Fabricant | Catégorie | Type | Category | Material | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Operational Bias Conditions | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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Les plus consultées
2N3440
Trans GP BJT NPN 250V 1A 5000mW 3-Pin TO-39
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Stock
3
$18.80
Par unité
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 250 | 300 | 1 | 7 | 1.3@4mA@50mA | 1 | 175 | 5000 | 30 to 50 | 40@20mA@10V | 35 | 10(Max) | 0.5@4mA@50mA | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||
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Les plus consultées
2N3055-JQR-B
NPN SILICON TRANSISTOR
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Semelab | GP BJT | 3 | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||
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BFX34
Trans GP BJT NPN 60V 2A 870mW 3-Pin TO-39
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Semelab | GP BJT | NPN | Bipolar Power | Single | 60 | 120 | 1 | 6 | 1.6@0.5A@5A | 2 | 870 | 30 to 50 | 40@2A@2V | 1@0.5A@5A | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| 2N3634CSM-QR-B Trans GP BJT PNP 140V 1A 1000mW 3-Pin CLLCC-1 |
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 140 | 140 | 1 | 5 | 0.8@1mA@10mA|0.9@5mA@50mA | 1 | 1000 | 2 to 30|30 to 50|50 to 120 | 40@0.1mA@10V|45@1mA@10V|50@10mA@10V|50@50mA@10V|25@150mA@10V | 0.3@1mA@10mA|0.5@5mA@50mA | 3 | CLLCC-1 | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| IRFY240 Trans MOSFET N-CH 200V 12A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFET | Power MOSFET | N | Single | Enhancement | 1 | 200 | ±20 | 4 | 60000 | 12 | 220@10V | 60(Max)@10V | 60(Max) | 1300@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
2N3209X
Trans GP BJT PNP 20V 0.2A 360mW 3-Pin TO-18
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 20 | 20 | 1 | 4 | 0.98@1mA@10mA|1.2@3mA@30mA|1.7@10mA@100mA | 0.2 | 486 | 360 | 2 to 30|30 to 50 | 25@10mA@0.3V|30@30mA@0.5V|15@100mA@1V | 146 | 5(Max) | 0.2@1mA@10mA|0.25@3mA@30mA|0.75@10mA@100mA | 3 | TO-18 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
2N2222ADCSM-QR-B
Trans GP BJT NPN 50V 0.8A 6-Pin CLLCC-2
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Semelab | GP BJT | NPN | Bipolar Power | Single | 50 | 75 | 1 | 6 | 1.2@15mA@150mA|2@50mA@500mA | 0.8 | 500 | 30 to 50|50 to 120 | 100@150mA@10V|30@500mA@10V|50@0.1mA@10V|75@1mA@10V|100@10mA@10V | 0.3@15mA@150mA|1@50mA@500mA | 250 | 6 | CLLCC-2 | LCC | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
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BCY71-QR
GENERAL PURPOSE PNP SILICON TRANSISTOR
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Semelab | GP BJT | Si | 3 | TO-18 | TO | No | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||
| D1203UK Trans RF MOSFET N-CH 40V 30A 4-Pin Case DM |
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Semelab | RF MOSFET | Si | N | Single Dual Source | Enhancement | 1 | 40 | ±20 | 117000 | 30 | 180(Max)@0V | 10(Min) | 1 | 30 | 200 | 4 | Case DM | No | No | No | No | No | 5A991g. | No | No | ||||||||||||||||||||||||||||||||||
| SML10SIC06YC Diode Schottky 600V 10A 3-Pin(3+Tab) TO-257AA |
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Semelab | Rectifiers | Schottky Diode | Dual Common Cathode | 600 | 10 | 250 | 1.8 | 50 | 100000 | 3 | TO-257AA | TO | No | No | No | No | No | 3A001.h | No | No | |||||||||||||||||||||||||||||||||||||||
| 2N6059 Trans Darlington NPN 100V 12A 3-Pin(2+Tab) TO-3 |
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Semelab | Darlington BJT | NPN | Single | 100 | 12 | 3 | TO-3 | TO | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||
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2N3947
Trans GP BJT NPN 40V 0.2A 360mW 3-Pin TO-18
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Semelab | GP BJT | NPN | Bipolar Power | Single | 40 | 1 | 0.2 | 360 | 50 to 120 | 100@1mA@10V | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
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2N5416
Trans GP BJT PNP 300V 1A 10000mW 3-Pin TO-39
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Semelab | GP BJT | PNP | Bipolar Power | Single | 300 | 1 | 1 | 10000 | 30 to 50 | 30@50mA@10V | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
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2N5153
Trans GP BJT PNP 80V 5A 3-Pin TO-39
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 80 | 100 | 1 | 5.5 | 1.45@250mA@2.5A|2.2@500mA@5A | 5 | 1000 | 30 to 50|50 to 120 | 50@50mA@5V|70@2.5A@5V|35@2.5A@5V | 0.75@250mA@2.5A|1.5@500mA@5A | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
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BCY70
Trans GP BJT PNP 40V 350mW 3-Pin TO-18
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Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 40 | 50 | 1 | 5 | 1.2@5mA@50mA | 350 | 2 to 30 | 15@50mA@1V | 0.5@5mA@50mA | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| SML020DH12 Diode Schottky 1.2KV 20A 3-Pin(3+Tab) TO-258 |
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Semelab | Rectifiers | Schottky Diode | Dual Common Cathode | 1200 | 20 | 50 | 1.8@10A | 200 | 116000 | 3 | TO-258 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
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2N5322
Trans GP BJT PNP 75V 1.2A 1000mW 3-Pin TO-39
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 75 | 100 | 1 | 6 | 1.2 | 1000 | 2 to 30|30 to 50 | 10@1A@2V|30@500mA@4V | 0.7@50mA@500mA | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D2019UKTR Gold Metallised Multi-Purpose Silicon Dmos RF FET |
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Semelab | RF MOSFET | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||
BUP52
Trans GP BJT NPN 200V 70A 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 200 | 1 | 10 | 1.1@2A@20A|1.2@4A@40A|1.5@14A@70A | 70 | 300000 | 2 to 30 | 20@20A@4V|12@40A@4V|8@70A@4V | 0.5@2A@20A|0.6@4A@40A|0.9@14A@70A | 50 | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| D2221UKTR Trans RF MOSFET 40V 6A 8-Pin SO |
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Semelab | RF MOSFET | Si | Dual Quad Source | 2 | 40 | ±20 | 17500 | 6 | 36(Max)@0V | 10(Min) | 1 | 7.5 | 2000 | 8 | SO | SO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| 2N3637CSM-JQR-B PNP SMT Silicon Transistor |
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Semelab | GP BJT | Unknown | Unknown | Unknown | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SML010FBDH06 Diode Schottky SiC 600V 10A 5-Pin(5+Tab) TO-258D |
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Semelab | Rectifiers | Schottky Diode | SiC | Dual Series | 600 | 10 | 45 | 2.2 | 100 | 5 | TO-258D | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
| DMD1009 Trans RF MOSFET N-CH 70V 5-Pin Case D1 |
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Semelab | RF MOSFET | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 7 | 648000 | 240(Max)@28V | 12(Min) | 1 | 500 | 5 | Case D1 | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| 2N6678 Trans GP BJT NPN 300V 15A 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 300 | 1 | 8 | 1.5@3A@15A | 15 | 175000 | 2 to 30 | 8@15A@3V | 1@3A@15A | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
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BFX29
Trans GP BJT PNP 60V 0.6A 600mW 3-Pin TO-39
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Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 60 | 60 | 1 | 5 | 0.9@1mA@30mA|1.3@15mA@150mA | 0.6 | 600 | 2 to 30|30 to 50|50 to 120 | 20@0.1mA@10V|40@1mA@10V|50@10mA@10V|50@50mA@10V|40@150mA@10V | 0.4@15mA@150mA | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No |