TT Electronics / Semelab Diodes, Transistors and Thyristors
| 型号 | 价格 | 库存 | 供应商 | 类别 | Type | Category | Material | Configuration | Channel Type | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Operational Bias Conditions | Maximum Gate Threshold Voltage - (V) | Minimum DC Current Gain | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Ambient Thermal Resistance | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Transition Frequency - (MHz) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Output Capacitance - (pF) | Maximum Power Dissipation - (mW) | Minimum Frequency - (MHz) | Maximum Frequency - (MHz) | Maximum Drain-Source Resistance - (Ohm) | Typical Power Gain - (dB) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| D2020UKTR Trans RF MOSFET 65V 2A 8-Pin SO |
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Semelab | 射频 MOSFETs | Si | Dual Quad Source | 2 | 65 | ±20 | 5 | 2 | 24(Max)@0V | 5 | 30000 | 1 | 1000 | 13(Min) | 8 | SO | SO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
2N2222ACSM-QR-EB
Trans GP BJT NPN 50V 0.8A 3-Pin CLLCC-1
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Semelab | 通用双极型晶体管 | NPN | Bipolar Power | Single | 50 | 75 | 1 | 6 | 1.2@15mA@150mA|2@50mA@500mA | 0.8 | 50@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V | 30 to 50|50 to 120 | 250 | 0.3@15mA@150mA|1@50mA@500mA | 500 | 3 | CLLCC-1 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D1210UK Trans RF MOSFET N-CH 40V 10A 4-Pin Case DA |
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Semelab | 射频 MOSFETs | Si | Single Dual Source | N | Enhancement | 1 | 40 | ±20 | 7 | 10 | 60(Max)@0V | 10 | 50000 | 1 | 175 | 10(Min) | 4 | Case DA | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| IRFE130 Trans MOSFET N-CH 100V 7.4A 16-Pin LCC-4 |
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Semelab | MOSFETs | Power MOSFET | Single Hex Drain Dual Gate Octal Source | N | Enhancement | 1 | 100 | ±20 | 4 | 7.4 | 28.5(Max)@10V | 28.5(Max) | 650@25V | 22000 | 207@10V | 16 | LCC-4 | LCC | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
2N2222ADCSM-QR-EB
Trans GP BJT NPN 50V 0.8A 6-Pin CLLCC-2
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Semelab | 通用双极型晶体管 | NPN | Bipolar Power | Single | 50 | 75 | 1 | 6 | 1.2@15mA@150mA|2@50mA@500mA | 0.8 | 50@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V | 30 to 50|50 to 120 | 250 | 0.3@15mA@150mA|1@50mA@500mA | 500 | 6 | CLLCC-2 | LCC | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| IRF9530-220M Trans MOSFET P-CH 100V 9.3A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | Single | P | Enhancement | 1 | 100 | ±20 | 4 | 9.3 | 30(Max)@10V | 30(Max) | 800@25V | 45000 | 360@10V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| 2N2223 Trans GP BJT NPN 60V 0.5A 600mW 6-Pin TO-77 |
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Semelab | 通用双极型晶体管 | NPN | Bipolar Power | Si | Dual | 60 | 100 | 2 | 7 | 0.9@5mA@50mA | 0.5 | 15@10uA@5V|25@100uA@5V|50@10mA@5V | 2 to 30|30 to 50|50 to 120 | 85(Max) | 1.2@5mA@50mA | 15(Max) | 600 | 6 | TO-77 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
2N3799X
Trans GP BJT PNP 50V 0.05A 3-Pin TO-18
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Semelab | 通用双极型晶体管 | PNP | Bipolar Small Signal | Si | Single | 50 | 60 | 1 | 5 | 0.7@10uA@100uA|0.8@100uA@1mA | 0.05 | 75@1uA@5V|225@10uA@5V|300@500uA@5V|300@1mA@5V|250@10mA@5V | 50 to 120|120 to 200|200 to 300|300 to 500 | 500 | 0.2@10uA@100uA|0.25@100uA@1mA | 360 | 4 | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| D1018UK Trans RF MOSFET N-CH 70V 15A 8-Pin Case DD |
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Semelab | 射频 MOSFETs | Si | Dual Common Source | N | Enhancement | 2 | 70 | ±20 | 15 | 180(Max)@28V | 250000 | 1 | 500 | 10(Min) | 8 | Case DD | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
| D1003UK Trans RF MOSFET N-CH 70V 15A 4-Pin Case DM |
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Semelab | 射频 MOSFETs | Si | Single Dual Source | N | Enhancement | 1 | 70 | ±20 | 15 | 180(Max)@0V | 60 | 117000 | 1 | 175 | 16(Min) | 4 | Case DM | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| IRFY130 Trans MOSFET N-CH 100V 11A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | Single | N | Enhancement | 1 | 100 | ±20 | 4 | 11 | 28.5(Max)@10V | 28.5(Max) | 650@25V | 45000 | 220@10V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
2N2222ACSM4
Trans GP BJT NPN 40V 0.8A 350mW 4-Pin CLLCC-3
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Semelab | 通用双极型晶体管 | NPN | Bipolar Small Signal | Si | Single | 40 | 75 | 1 | 6 | 1.2@15mA@150mA|2@50mA@500mA | 0.8 | 35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|40@500mA@10V|50@150mA@1V | 30 to 50|50 to 120 | 30(Max) | 0.3@15mA@150mA|1@50mA@500mA | 8(Max) | 350 | 4 | CLLCC-3 | LCC | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| BDY58S Trans GP BJT NPN 125V 25A 175000mW 3-Pin(2+Tab) TO-3 |
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Semelab | 通用双极型晶体管 | NPN | Bipolar Power | Single | 125 | 1 | 25 | 20@10A@4V | 2 to 30 | 175000 | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||
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2N4392CSM
Trans JFET N-CH 40V Si 3-Pin CLLCC-1
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Semelab | JFETs | Si | Single | N | 40 | 40 | 40 | 14(Max) | 300 | 60000 | 3 | CLLCC-1 | LCC | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
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2N7002CSM-QR-B
Trans MOSFET N-CH 60V 0.115A 3-Pin CLLCC-1
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Semelab | MOSFETs | Small Signal | Single | N | Enhancement | 1 | 60 | ±40 | 0.115 | 50(Max)@25V | 350 | 7500@10V | 3 | CLLCC-1 | LCC | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
| BDY78 Trans GP BJT NPN 55V 4A 36000mW 3-Pin(2+Tab) TO-66 |
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Semelab | 通用双极型晶体管 | NPN | Bipolar Power | Single | 55 | 1 | 4 | 25@0.5A@4V | 2 to 30 | 36000 | 3 | TO-66 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||
| IRF9230 Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) TO-3 |
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Semelab | MOSFETs | Power MOSFET | Single | P | Enhancement | 1 | 200 | ±20 | 6.5 | 31(Max)@10V | 31(Max) | 700@25V | 75000 | 920@10V | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D1011UK Trans RF MOSFET N-CH 70V 5A 8-Pin SO |
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Semelab | 射频 MOSFETs | Si | Dual Quad Source | N | Enhancement | 2 | 70 | ±20 | 7 | 5 | 60(Max)@28V | 10 | 30000 | 1 | 1000 | 13(Min) | 8 | SO | SO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
2N6849-QR-B
Trans MOSFET P-CH 100V 5.8A 3-Pin TO-39
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Semelab | MOSFETs | Power MOSFET | Single | P | Enhancement | 1 | 100 | ±20 | 5.8 | 25@15V | 845@25V | 20833 | 300@10V | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
| BDS21-QR-EB Trans GP BJT PNP 80V 5A 3-Pin(3+Tab) TO-257AB |
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Semelab | 通用双极型晶体管 | PNP | Bipolar Power | Si | Single | 80 | 80 | 1 | 5 | 5 | 1000@0.5A@3V|1000@3A@3V | 500 to 3600 | 2@12mA@3A|4@20mA@5A | 35000 | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
| BYV32-200M Diode Switching 200V 20A 3-Pin(3+Tab) TO-257AB |
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Semelab | Rectifiers | Switching Diode | Dual Common Cathode | 200 | 20 | 80 | 1.5 | 30 | 35 | 3 | TO-257AB | No | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||
| IRFF9130 Trans MOSFET P-CH 100V 5.8A 3-Pin TO-39 |
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Semelab | MOSFETs | Power MOSFET | Single | P | Enhancement | 1 | 100 | ±20 | 5.8 | 25@15V | 845@25V | 20833 | 300@10V | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
2N3700DCSM
Trans GP BJT NPN 80V 1A 525mW 6-Pin CLLCC-2
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Semelab | 通用双极型晶体管 | NPN | Bipolar Power | Si | Dual | 80 | 140 | 2 | 7 | 1.1@15mA@150mA | 1 | 50@0.1mA@10V|90@10mA@10V|100@150mA@10V|50@500mA@10V|15@1A@10V | 2 to 30|30 to 50|50 to 120 | 240 | 60(Max) | 200 | 0.2@15mA@150mA|0.5@50mA@500mA | 12(Max) | 525 | 6 | CLLCC-2 | LCC | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| D2210UK Trans RF MOSFET N-CH 40V 16A 3-Pin Case DP |
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Semelab | 射频 MOSFETs | Si | Single | N | Enhancement | 1 | 40 | ±20 | 7 | 16 | 96(Max)@12.5V | 70000 | 0 | 1000 | 10(Min) | 3 | Case DP | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| DMD1029-A Trans RF MOSFET N-CH 70V 35A 5-Pin Case D1 |
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Semelab | 射频 MOSFETs | Si | Dual Common Source | N | Enhancement | 2 | 70 | ±20 | 7 | 35 | 420(Max)@28V | 438000 | 1 | 400 | 16(Min) | 5 | Case D1 | No | No | No | No | No | EAR99 | No | No |