TT Electronics / Semelab Diodes, Transistors and Thyristors
| 型号 | 价格 | 库存 | 供应商 | 类别 | Type | Category | Material | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Number of Elements per Chip | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Maximum Gate Threshold Voltage - (V) | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Ambient Thermal Resistance | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| BDS19 Trans GP BJT PNP 150V 8A 43750mW 3-Pin(3+Tab) TO-257AB |
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Semelab | 通用双极型晶体管 | PNP | Bipolar Power | Si | Single | 150 | 1 | 150 | 5 | 8 | 2 to 30|30 to 50 | 40@0.5A@2V|15@4A@2V | 43750 | 0.4@0.05A@0.5A|1.5@0.4A@4A | 500 | 3 | TO-257AB | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D2229UK Trans RF MOSFET 40V 2A 8-Pin Case F-0127 |
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Semelab | 射频 MOSFETs | Si | Dual Quad Source | 2 | 40 | ±20 | 2 | 17500 | 12(Max)@0V | 1 | 2.5 | 10(Min) | 8 | Case F-0127 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
| D2014UK Trans RF MOSFET N-CH 65V 1A 6-Pin SOT-171 |
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Semelab | 射频 MOSFETs | Si | N | Single Quad Source | 1 | 65 | ±20 | 1 | 17500 | 12(Max)@28V | 0 | 13(Min) | 6 | SOT-171 | SOT | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
| VN10K-QR-B Trans MOSFET N-CH 60V 0.17A 3-Pin TO-18 |
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Semelab | MOSFETs | Small Signal | N | Single | Enhancement | 1 | 60 | 15 | 0.17 | 5000@10V | 312.5 | 60(Max)@25V | 3 | TO-18 | No | Unknown | Unknown | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| BSS52 Bipolar Power Transistor |
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Semelab | 通用双极型晶体管 | Unknown | Unknown | Unknown | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N3440-JQR-B
Trans GP BJT NPN 250V 1A 5000mW 3-Pin TO-39
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Semelab | 通用双极型晶体管 | NPN | Bipolar Power | Si | Single | 250 | 1 | 300 | 7 | 1.3@4mA@50mA | 1 | 30 to 50 | 40@20mA@10V | 175 | 35 | 5000 | 0.5@4mA@50mA | 10(Max) | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
| D2294UK Trans RF MOSFET N-CH 40V 12A 6-Pin SOT-171 |
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Semelab | 射频 MOSFETs | Si | N | Single Quad Source | Enhancement | 1 | 40 | ±20 | 12 | 50000 | 72(Max)@0V | 1 | 15 | 11(Min) | 6 | SOT-171 | SOT | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| D2002UK Trans RF MOSFET N-CH 65V 2A 3-Pin Case DP |
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Semelab | 射频 MOSFETs | Si | N | Single | Enhancement | 1 | 65 | ±20 | 2 | 29000 | 20(Max)@0V | 0 | 5 | 13(Min) | 3 | Case DP | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D1027UK Trans RF MOSFET N-CH 70V 30A 5-Pin Case DR |
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Semelab | 射频 MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 30 | 438000 | 360(Max)@28V | 1 | 150 | 13(Min) | 5 | Case DR | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
2N2369ADCSM
Trans GP BJT NPN 15V 0.2A 500mW 6-Pin CLLCC-2
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Semelab | 通用双极型晶体管 | NPN | Bipolar Small Signal | Si | Dual | 15 | 2 | 40 | 4.5 | 0.85@1mA@10mA|0.9@3mA@30mA|1.2@10mA@100mA | 0.2 | 2 to 30|30 to 50 | 40@10mA@0.35V|40@10mA@1V|30@30mA@0.4V|20@100mA@1V | 486 | 500 | 0.2@1mA@10mA|0.25@3mA@30mA|0.45@10mA@100mA | 12 | 6 | CLLCC-2 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
2N2222ACSM-QR-EB
Trans GP BJT NPN 50V 0.8A 3-Pin CLLCC-1
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Semelab | 通用双极型晶体管 | NPN | Bipolar Power | Single | 50 | 1 | 75 | 6 | 1.2@15mA@150mA|2@50mA@500mA | 0.8 | 30 to 50|50 to 120 | 50@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V | 500 | 0.3@15mA@150mA|1@50mA@500mA | 250 | 3 | CLLCC-1 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| 2N2223 Trans GP BJT NPN 60V 0.5A 600mW 6-Pin TO-77 |
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Semelab | 通用双极型晶体管 | NPN | Bipolar Power | Si | Dual | 60 | 2 | 100 | 7 | 0.9@5mA@50mA | 0.5 | 2 to 30|30 to 50|50 to 120 | 15@10uA@5V|25@100uA@5V|50@10mA@5V | 85(Max) | 600 | 1.2@5mA@50mA | 15(Max) | 6 | TO-77 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| D2020UKTR Trans RF MOSFET 65V 2A 8-Pin SO |
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Semelab | 射频 MOSFETs | Si | Dual Quad Source | 2 | 65 | ±20 | 5 | 2 | 30000 | 24(Max)@0V | 1 | 5 | 13(Min) | 8 | SO | SO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
2N3799X
Trans GP BJT PNP 50V 0.05A 3-Pin TO-18
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Semelab | 通用双极型晶体管 | PNP | Bipolar Small Signal | Si | Single | 50 | 1 | 60 | 5 | 0.7@10uA@100uA|0.8@100uA@1mA | 0.05 | 50 to 120|120 to 200|200 to 300|300 to 500 | 75@1uA@5V|225@10uA@5V|300@500uA@5V|300@1mA@5V|250@10mA@5V | 360 | 0.2@10uA@100uA|0.25@100uA@1mA | 500 | 4 | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| IRF9530-220M Trans MOSFET P-CH 100V 9.3A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | ±20 | 4 | 9.3 | 360@10V | 30(Max)@10V | 30(Max) | 45000 | 800@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| IRFY130 Trans MOSFET N-CH 100V 11A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 11 | 220@10V | 28.5(Max)@10V | 28.5(Max) | 45000 | 650@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| IRFE130 Trans MOSFET N-CH 100V 7.4A 16-Pin LCC-4 |
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Semelab | MOSFETs | Power MOSFET | N | Single Hex Drain Dual Gate Octal Source | Enhancement | 1 | 100 | ±20 | 4 | 7.4 | 207@10V | 28.5(Max)@10V | 28.5(Max) | 22000 | 650@25V | 16 | LCC-4 | LCC | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
2N5415CSM4
Trans GP BJT PNP 200V 1A 1000mW 4-Pin CLLCC-3
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Semelab | 通用双极型晶体管 | PNP | Bipolar Power | Si | Single | 200 | 1 | 200 | 4 | 1 | 30 to 50 | 30@50mA@10V | 150 | 1000 | 0.5@5mA@50mA | 25(Max) | 4 | CLLCC-3 | LCC | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| D1210UK Trans RF MOSFET N-CH 40V 10A 4-Pin Case DA |
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Semelab | 射频 MOSFETs | Si | N | Single Dual Source | Enhancement | 1 | 40 | ±20 | 7 | 10 | 50000 | 60(Max)@0V | 1 | 10 | 10(Min) | 4 | Case DA | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| D1003UK Trans RF MOSFET N-CH 70V 15A 4-Pin Case DM |
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Semelab | 射频 MOSFETs | Si | N | Single Dual Source | Enhancement | 1 | 70 | ±20 | 15 | 117000 | 180(Max)@0V | 1 | 60 | 16(Min) | 4 | Case DM | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D1018UK Trans RF MOSFET N-CH 70V 15A 8-Pin Case DD |
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Semelab | 射频 MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 15 | 250000 | 180(Max)@28V | 1 | 10(Min) | 8 | Case DD | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
| 2N6299 Trans Darlington PNP 80V 8A 3-Pin(2+Tab) TO-66 |
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Semelab | 达林顿双极型晶体管 | PNP | Single | 80 | 8 | 3 | TO-66 | TO | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||
| D5017UK Trans RF MOSFET N-CH 125V 18A 4-Pin Case DM |
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Semelab | 射频 MOSFETs | Si | N | Single Dual Source | Enhancement | 1 | 125 | ±20 | 18 | 220000 | 360(Max)@50V | 1 | 150 | 10(Min) | 4 | Case DM | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
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BSX52A
Trans GP BJT NPN 50V 0.2A 300mW 3-Pin TO-18
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Semelab | 通用双极型晶体管 | NPN | Bipolar Power | Single | 50 | 1 | 0.2 | 300 to 500 | 300@2mA@4.5V | 300 | 3 | TO-18 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
2N2222ADCSM-QR-EB
Trans GP BJT NPN 50V 0.8A 6-Pin CLLCC-2
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Semelab | 通用双极型晶体管 | NPN | Bipolar Power | Single | 50 | 1 | 75 | 6 | 1.2@15mA@150mA|2@50mA@500mA | 0.8 | 30 to 50|50 to 120 | 50@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V | 500 | 0.3@15mA@150mA|1@50mA@500mA | 250 | 6 | CLLCC-2 | LCC | No | No | No | No | No | EAR99 | No | No |