Toshiba Diodes, Transistors and Thyristors
| 型号 | 价格 | 库存 | 供应商 | 类别 | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Surge Current Rating - (A) | Material | Configuration | Channel Type | Maximum Reverse Voltage - (V) | Maximum Rate of Rise of On-State Current - (A/us) | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Repetitive Peak Forward Blocking Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Minimum DC Current Gain | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Ambient Thermal Resistance | Frequency Band | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Transition Frequency - (MHz) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Output Capacitance - (pF) | Maximum Power Dissipation - (mW) | Maximum Frequency - (MHz) | Maximum Drain-Source Resistance - (Ohm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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2SA2060(TE12L,F)
Trans GP BJT PNP 50V 2A 2500mW 4-Pin(3+Tab) PW-Mini T/R
|
库存
113
从 $0.274 到 $0.563
每个
|
Toshiba | 通用双极型晶体管 | PNP | Bipolar Power | Si | Single Dual Collector | 50 | 50 | 1 | 7 | 1.1@0.033A@1A | 2 | 200@0.3A@2V|100@1A@2V | 50 to 120|120 to 200|200 to 300 | 0.2@0.033A@1A | 2500 | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K37CT,L3F(T
Trans MOSFET N-CH Si 20V 0.2A 3-Pin CST T/R
|
库存
9,010
从 $0.0509 到 $0.0566
每个
|
Toshiba | MOSFETs | Small Signal | Si | Single | N | Enhancement | 1 | 20 | ±10 | 0.2 | 12@10V | 100 | 2200@4.5V | Tape and Reel | 3 | CST | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6J215FE(TE85L,F
Trans MOSFET P-CH Si 20V 3.4A 6-Pin ES T/R
|
库存
4,000
从 $0.162 到 $0.389
每个
|
Toshiba | MOSFETs | Small Signal | Si | Single Quad Drain | P | Enhancement | 1 | 20 | ±8 | 1 | 3.4 | 10.4@4.5V | 630@10V | 500 | 59@4.5V | Tape and Reel | 6 | ES | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1162-GR,LXGF(T
Trans GP BJT PNP 50V 0.15A 150mW Automotive AEC-Q101 3-Pin S-Mini T/R
|
库存
1,095
从 $0.0392 到 $0.123
每个
|
Toshiba | 通用双极型晶体管 | PNP | Bipolar Small Signal | Si | Single | 50 | 50 | 1 | 5 | 0.15 | 200@2mA@6V | 200 to 300 | 0.3@10mA@100mA | 4 | 150 | 10 | Tape and Reel | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRZ16(TE85L,Q,M)
Zener Diode Single 16V 10% 30Ohm 700mW 2-Pin S-FLAT T/R
|
库存
2,060
从 $0.0927 到 $0.242
每个
|
Toshiba | 齐纳二极管 | Voltage Regulator | Single | 16 | 10% | 10 | 10 | 30 | 700 | 700 | Tape and Reel | 2 | S-FLAT | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK8R2E06PL,S1X(S
Trans MOSFET N-CH Si 60V 50A 3-Pin(3+Tab) TO-220
|
库存
130
从 $0.529 到 $0.879
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | Single | N | Enhancement | 1 | 60 | ±20 | 50 | 15@4.5V|28@10V | 1990@30V | 81000 | 8.2@10V | 3 | TO-220 | TO | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TTA1452B,S4X
Trans GP BJT PNP 80V 12A 2000mW 3-Pin(3+Tab) TO-220SIS Magazine
|
库存
250
$1.3521
每个
|
Toshiba | 通用双极型晶体管 | PNP | Bipolar Power | Si | Single | 80 | 80 | 1 | 6 | 1.2@0.3A@6A | 12 | 120@1A@1V|40@6A@1V | 30 to 50|50 to 120|120 to 200 | 0.4@0.3A@6A | 2000 | Magazine | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CRS10I30E,LQ(O Schottky Barrier Diode |
库存
2,900
从 $0.0659 到 $0.155
每个
|
Toshiba | Rectifiers | 2 | S-FLAT | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK31N60W5,S1VF(S
Trans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-247
|
库存
30
从 $3.16 到 $4.58
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | Single | N | Enhancement | 1 | 600 | ±30 | 4.5 | 30.8 | 105@10V | 105 | 3000@300V | 230000 | 99@10V | DTMOSIV | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TK4R3E06PL,S1X(S
Trans MOSFET N-CH Si 60V 106A 3-Pin(3+Tab) TO-220
|
库存
15
从 $1.06 到 $2.17
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | Single | N | Enhancement | 1 | 60 | ±20 | 106 | 23.9@4.5V|48.2@10V | 3280@30V | 87000 | 4.3@10V | 3 | TO-220 | TO | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
RN1401,LF
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin S-Mini T/R Automotive AEC-Q101
|
库存
6,000
从 $0.032 到 $0.0363
每个
|
Toshiba | 数字双极型晶体管 | NPN | Single | 50 | 0.1 | 4.7 | 1 | 30@10mA@5V | 0.3@0.25mA@5mA | 200 | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1114MFV,L3F(T
Trans Digital BJT NPN 50V 0.1A 150mW 3-Pin VESM T/R
|
库存
5,890
从 $0.0239 到 $0.075
每个
|
Toshiba | 数字双极型晶体管 | NPN | Single | 50 | 0.1 | 1 | 0.1 | 50@10mA@5V | 0.3@0.25mA@5mA | 150 | Tape and Reel | 3 | VESM | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CUHS10F60,H3F
Diode Small Signal Schottky Si 1A 2-Pin US-H T/R
|
库存
7
$0.021
每个
|
Toshiba | Rectifiers | Small Signal Schottky Diode | Si | Single | 1 | 10 | 0.62 | 40 | 130(Typ) | Tape and Reel | 2 | US-H | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH9R00CQH,LQ(M1
Trans MOSFET N-CH Si 150V 108A 8-Pin SOP Advance T/R
|
库存
4,770
从 $1.04 到 $3.09
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain Triple Source | N | Enhancement | 1 | 150 | ±20 | 108 | 36@8V|44@10V | 44 | 3500@75V | 3000 | 9@10V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMS04(TE12L,Q,M)
Diode Schottky 30V 5A 2-Pin M-FLAT T/R
|
库存
22,070
从 $0.2741 到 $0.2784
每个
|
Toshiba | Rectifiers | Schottky Diode | Single | 30 | 5 | 70 | 0.37 | 8000 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6K781G,LF(S
Trans MOSFET N-CH Si 12V 7A 6-Pin WCSP-C T/R
|
库存
1,800
从 $0.20 到 $0.555
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | Single Triple Drain Dual Source | N | Enhancement | 1 | 12 | ±8 | 1 | 7 | 5.4@4.5V | 600@6V | 2900 | 18@4.5V | Tape and Reel | 6 | WCSP-C | CSP | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SSM3K35AMFV,L3F
Trans MOSFET N-CH Si 20V 0.25A 3-Pin VESM T/R
|
库存
6,836
从 $0.0232 到 $0.1791
每个
|
Toshiba | MOSFETs | Small Signal | Si | Single | N | Enhancement | 1 | 20 | ±10 | 0.25 | 0.62@4.5V | 18@10V | 500 | 1100@4.5V | Tape and Reel | 3 | VESM | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS8E65F,S1Q(S
Diode Schottky SiC 650V 8A 2-Pin(2+Tab) TO-220-L Tube
|
库存
49
从 $20.60 到 $27.20
每个
|
Toshiba | Rectifiers | Schottky Diode | SiC | Single | 650 | 8 | 69 | 1.6 | 40 | Tube | 2 | TO-220-L | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS382(TE85L,F)
Diode Switching 85V 0.1A 4-Pin USQ T/R
|
库存
1,036
从 $0.114 到 $0.314
每个
|
Toshiba | Rectifiers | Switching Diode | Dual Parallel | 85 | 0.1 | 2 | 1.2@0.1A | 0.5 | 4 | 100 | Tape and Reel | 4 | USQ | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1832-GR,LF(T
Trans GP BJT PNP 50V 0.15A 100mW 3-Pin SSM T/R Automotive AEC-Q101
|
库存
2,760
从 $0.0442 到 $0.112
每个
|
Toshiba | 通用双极型晶体管 | PNP | Bipolar Small Signal | Si | Single | 50 | 50 | 1 | 5 | 0.15 | 200@2mA@6V | 200 to 300 | 0.3@10mA@100mA | 100 | Tape and Reel | 3 | SSM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN1C03FU-B,LF(T
Trans GP BJT NPN 20V 0.3A 200mW 6-Pin US T/R
|
库存
2,439
从 $0.176 到 $0.488
每个
|
Toshiba | 通用双极型晶体管 | NPN | Bipolar Small Signal | Si | Dual | 20 | 50 | 2 | 25 | 0.3 | 350@4mA@2V | 300 to 500 | 0.1@3mA@30mA | 200 | Tape and Reel | 6 | US | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TPH5R60APL,L1Q(M
Trans MOSFET N-CH Si 100V 60A 8-Pin SOP Advance
|
库存
14
从 $0.771 到 $1.57
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain Triple Source | N | Enhancement | 1 | 100 | ±20 | 60 | 26@4.5V|52@10V | 3300@50V | 132000 | 5.6@10V | 8 | SOP Advance | SO | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN4C06J-GR(TE85L,F
Trans GP BJT NPN 120V 0.1A 300mW 5-Pin SMV T/R
|
库存
5
$0.507
每个
|
Toshiba | 通用双极型晶体管 | NPN | Bipolar Small Signal | Si | Dual Common Emitter | 120 | 120 | 2 | 5 | 0.1 | 200@2mA@6V | 200 to 300 | 0.3@1mA@10mA | 300 | Tape and Reel | 5 | SMV | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
RN2116MFV,L3F(T
Trans Digital BJT PNP 50V 0.1A 150mW 3-Pin VESM T/R
|
库存
8,000
从 $0.0239 到 $0.075
每个
|
Toshiba | 数字双极型晶体管 | PNP | Single | 50 | 0.1 | 4.7 | 0.47 | 50@10mA@5V | 0.3@0.5mA@5mA | 150 | Tape and Reel | 3 | VESM | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN4982FE,LF(CT
Trans Digital BJT NPN/PNP 50V 0.1A 100mW 6-Pin ES T/R
|
库存
3,050
从 $0.0614 到 $0.138
每个
|
Toshiba | 数字双极型晶体管 | NPN|PNP | Dual | 50 | 0.1 | 10 | 1 | 50@10mA@5V | 0.3@0.25mA@5mA | 100 | Tape and Reel | 6 | ES | No | No | No | No | No | EAR99 | No |